MMBT6520

S MD Type High Voltage Transistor MMBT6520 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features PNP Silicon High Voltage Transistor 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Base current Collector current-continuous Total device dissipation FR-5 board *1 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Total device dissipation alumina substrate *2 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. RèJA TJ, Tstg PD 300 2.4 417 -55 to +150 mW mW/ /W RèJA PD 225 1.8 556 mW mW/ /W Symbol VCEO VCBO VEBO IB IC Rating -350 -350 -5 -250 -500 mA Unit V V V +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type MMBT6520 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Testconditons Transistors Min -350 -350 -5 Typ Max Unit V(BR) CE0 IC = -1 mA, IB = 0 V(BR) CB0 IC = -100 ìA, IE = 0 V(BR) EB0 ICEO IEBO IE = -10 ìA, IC = 0 VCB = -250 V, IB = 0 VEB = -4 V, IC IC = -1.0 mA, VCE = -10 V IC = -10 mA, VCE = -10 V V -50 -50 20 30 30 20 15 -0.3 -0.35 -0.5 -1 -0.75 -0.85 -0.9 -2 40 200 6 100 200 200 nA nA DC current gain hFE IC = -30 mA, VCE = -10 V IC = -50 mA, VCE = -10 V IC = -100 mA, VCE = -10 V IC = -10 mA, IB = -1 mA V V V V V V V V MHz pF pF Collector-emitter saturation voltage VCE(sat) IC = -20 mA, IB = -2 mA IC = -30 mA, IB = -3 mA IC = -50 mA, IB = -5 mA IC = -10 mA, IB = -1 mA Base-emitter saturation voltage VBE(sat) IC = -20 mA, IB = -2 mA IC = -30 mA, IB = -3 mA Base-emitter on voltage Transition frequency Collector-base capacitance Emitter-base capacitance VBE(on) fT Ccb Ceb IC = -100 mA, VCE = -10 V IC = -10 mA, VCE = -20 V, f = 20 MHz VCB = -20 V, f = 1 MHz VEB = -0.5 V, f = 1 MHz Marking Marking 2Z 2 www.kexin.com.cn