MMBTA05

SMD S MD Type Driver Transistors MMBTA05, MMBTA06 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 NPN silicon. 0.55 Driver transistors. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board (* 1) @TA = 25 Derate above 25 Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (* 2) @TA = 25 Derate above 25 Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4X 0.3 X 0.024 in. 99.5% alumina. Symbol VCEO VCBO VEBO IC PD RèJA MMBTA05 60 60 4.0 500 225 1.8 556 MMBTA06 80 80 Unit V V V mA mW mW/ /W PD 300 2.4 417 150 -55 to +150 mW mW/ /W RèJA Tj Tstg +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type MMBTA05, MMBTA06 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage* MMBTA05 MMBTA06 Emitter-base breakdown voltage Base cutoff current Collector cutoff current MMBTA05 MMBTA06 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Current-gain-bandwidth product * Pulse test: pulse width 300 ìs, duty cycle HFE VCE(sat) VBE(on) fT 2.0%. V(BR)EBO ICES ICBO IE = 100 ìA, IC = 0 VCE = 60 V, IB = 0 VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 100 mA, IB = 10 mA IC = 100 mA, VCE = 1.0 V IC = 10 mA, VCE = 2.0 V, f = 100 MHz Symbol V(BR)CEO Testconditons IC = 1.0 mA, IB = 0 Transistors IC Min 60 80 4 Typ Max Unit V V V 0.1 0.1 0.1 100 100 0.25 1.2 100 ìA ìA ìA V V MHz hFE Classification TYPE Marking MMBTA05 1H MMBTA06 1GM 2 www.kexin.com.cn