MMBTA20

SMD S MD Type General Purpose Amplifier MMBTA20 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 General Purpose Amplifier. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board (* 1) @TA = 25 Derate above 25 Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (* 2) @TA = 25 Derate above 25 Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Symbol VCEO VEBO IC PD RèJA Rating 40 4 100 225 1.8 556 Unit V V mA mW mW/ /W PD 300 2.4 417 150 -55 to +150 mW mW/ /W RèJA Tj Tstg Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain Collector-emitter saturation voltage Current-gain-bandwidth product Output capacitance Symbol V(BR)CEO V(BR)EBO ICBO HFE VCE(sat) fT Cobo Testconditons IC = 1.0 mA, IB = 0 IE = 10 ìA, IC = 0 VCB = 30 V, IE = 0 IC = 5.0 mA, VCE = 10 V IC = 10 mA, IB = 1.0 mA IC = 5.0 mA, VCE = 10 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 1.0 MHz 125 4.0 40 Min 40 4.0 100 400 0.25 V MHz pF Typ Max Unit V V nA Marking Marking 1C +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1