MMBTA43

S MD Type High Voltage Transistors MMBTA43 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 Features NPN Silicon +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current-continuous Total device dissipation FR-5 board *1 @TA = 25 Derate above 25 Thermal resistance, junction-to-ambient Total device dissipation alumina substrate *2 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. RèJA TJ, Tstg PD 300 2.4 417 -55 to +150 mW mW/ /W RèJA PD 225 1.8 556 mW mW/ /W Symbol VCEO VCBO VEBO IC Rating 200 200 6 500 Unit V V V mA +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type MMBTA43 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage * Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Testconditons Transistors Min 200 200 6 Typ Max Unit V V V V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO IC = 100 ìA, IE = 0 V(BR)EBO IE = 100 ìA, IC = 0 ICBO IEBO VCB = 160 V, IE = 0 VEB = 4.0 V, IC = 0 IC = 1.0 mA, VCE = 10 V 0.1 0.1 25 40 40 0.5 0.9 50 4 ìA ìA DC current gain * hFE IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage * Base-emitter saturation voltage * Current-gain - bandwidth product Collector-base capacitance * Pulse Test: Pulse Width VCE(sat) IC = 20 mA, IB = 2.0 mA VBE(sat) IC = 20 mA, IB = 2.0 mA fT Ccb IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 20 V, IE = 0, f = 1.0 MHz V V MHz pF 300 ìs, Duty Cycle 2.0%. Marking Marking M1E 2 www.kexin.com.cn