S MD Type
High Voltage Transistors MMBTA43
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
Features
NPN Silicon
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current-continuous Total device dissipation FR-5 board *1 @TA = 25 Derate above 25 Thermal resistance, junction-to-ambient Total device dissipation alumina substrate *2 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. RèJA TJ, Tstg PD 300 2.4 417 -55 to +150 mW mW/ /W RèJA PD 225 1.8 556 mW mW/ /W Symbol VCEO VCBO VEBO IC Rating 200 200 6 500 Unit V V V mA
+0.1 0.38-0.1
0-0.1
www.kexin.com.cn
1
SMD Type
MMBTA43
Electrical Characteristics Ta = 25
Parameter Collector-emitter breakdown voltage * Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Symbol Testconditons
Transistors
Min 200 200 6
Typ
Max
Unit V V V
V(BR)CEO IC = 1.0 mA, IB = 0 V(BR)CBO IC = 100 ìA, IE = 0 V(BR)EBO IE = 100 ìA, IC = 0 ICBO IEBO VCB = 160 V, IE = 0 VEB = 4.0 V, IC = 0 IC = 1.0 mA, VCE = 10 V
0.1 0.1 25 40 40 0.5 0.9 50 4
ìA ìA
DC current gain *
hFE
IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V
Collector-emitter saturation voltage * Base-emitter saturation voltage * Current-gain - bandwidth product Collector-base capacitance * Pulse Test: Pulse Width
VCE(sat) IC = 20 mA, IB = 2.0 mA VBE(sat) IC = 20 mA, IB = 2.0 mA fT Ccb IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 20 V, IE = 0, f = 1.0 MHz
V V MHz pF
300 ìs, Duty Cycle 2.0%.
Marking
Marking M1E
2
www.kexin.com.cn
很抱歉,暂时无法提供与“MMBTA43”相匹配的价格&库存,您可以联系我们找货
免费人工找货