MMBTA70

SMD S MD Type General Purpose Transistor MMBTA70 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 General Purpose Transistor +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board (* 1) @TA = 25 Derate above 25 Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (* 2) @TA = 25 Derate above 25 Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature * 1. FR-5 = 1.0 × 0.75 × 0.062 in. * 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. Symbol VCEO VEBO IC PD RèJA Rating -40 -4 -100 225 1.8 556 Unit V V mA mW mW/ /W PD 300 2.4 417 150 -55 to +150 mW mW/ /W RèJA Tj Tstg Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current gain Collector-emitter saturation voltage Current-gain-bandwidth product Output capacitance Symbol V(BR)CEO V(BR)EBO ICBO HFE VCE(sat) fT Cobo Testconditons IC = -1.0 mA, IB = 0 IE = -100 ìA, IC = 0 VCB = -30 V, IE = 0 IC = -5.0 mA, VCE = -10 V IC = -10 mA, IB = -1.0 mA IC = -5.0 mA, VCE = -10 V, f = 100 MHz VCB = -10 V, IE = 0, f = 1.0 MHz 125 4.0 40 Min -40 -4.0 -100 400 -0.25 V MHz pF Typ Max Unit V V nA Marking Marking M2C +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1