RB160M-30

S MD Type Schottky Barrier Diode RB160M-30 SOD-123 Diodes Unit: mm +0.05 1.1-0.05 Features Small power mold type. Low IR High reliability +0.1 2.7-0.1 +0.1 0.55-0.1 +0.1 3.7-0.1 0.1max 0.128 0.03 3.8 0.1 Absolute Maximum Ratings Ta = 25 Parameter Reverse voltage reverse voltage Forward current surge peak Average rectified forward current operating junction temperature storage temperature Symbol VRM VR Io IFSM Tj Tstg Rating 30 30 1 30 125 -40 to +150 Unit V V A A Electrical Characteristics Ta = 25 Parameter Forward voltage Symbol VF1 VF2 Reverse current IR1 IR2 IF=0.5A IF=1.0A VR=15V VR=30V Testconditons Min Typ 0.39 0.43 3.0 9.0 Max 0.46 0.48 20 50 Unit V V A A +0.05 0.1-0.02 1.10 0.05 0.50 0.35 +0.1 1.6-0.1 www.kexin.com.cn 1 SMD Type RB160M-30 Electrical characteristic curves (Ta=25°C) 1 Ta=75℃ REVERSE CURRENT:IR(uA) 10000 1000 Ta=75℃ 100 10 1 0.1 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ Ta=125℃ 1000 Diodes f=1MHz FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=-25℃ 0.01 Ta=-25℃ 10 0.001 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 450 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 440 430 420 AVE:424.2mV 410 400 VF DISPERSION MAP Ta=25℃ IF=1A n=30pcs 100 90 80 70 60 50 40 30 20 10 0 AVE:8.172uA Ta=25℃ VR=30V n=30pcs 400 390 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 370 360 350 340 330 320 310 300 AVE:324.4pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 150 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 AVE:98.0A 50 1cyc RESERVE RECOVERY TIME:trr(ns) 20 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 10 AVE:11.7ns 5 50 Ifsm 8.3ms 8.3ms 1cyc 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 IFSM DISRESION MAP 0 trr DISPERSION MAP 150 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board IM=10mA IF=0.5A 1 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 0.8 0.6 0.4 0.2 0 Sin(θ＝180) D=1/2 DC 100 1ms time 300us 10 Rth(j-c) 50 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1 10 100 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.kexin.com.cn