RB411D

S MD Type Schottky Barrier Diode KB411D(RB411D) SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 Low VF. (VF=0.43V Typ. at 0.5A) High reliability. Silicon epitaxial planar +0.1 1.3-0.1 Small surface mounting type 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Reverse voltage DC Reverse voltage Mean rectifying current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Rating 40 20 0.5 3 125 -40 to +125 Unit V V A A Electrical Characteristics Ta = 25 Parameter Forwarad voltage Reverse current Capacitance between terminal Symbol VF 1 VF 2 IR1 CT IF=500mA IF=10mA VR=10V VR=10V , f=1MHz 20 Testconditons Min Typ Max 0.50 0.30 30 Unit V V A pF Marking Marking D3E +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1