RB425D

S MD Type Shottky barrier diode RB425D SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Diodes Unit: mm +0.1 2.4-0.1 Features Small mold type.(SMD3) Low IR. High reliability. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute M axim um Ratings Ta = 25 Param eter Reverse voltage (repetitive peak) DC reverse voltage Average rectified forward current * Forward current surge peak (60 Hz 1cyc) * Junction tem perature Storage tem perature * Rating of per diode Sym bol V RM VR IO I FSM Tj T stg Lim its 40 40 100 1 125 -40 to + 125 Unit V V mA A Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR CT Conditions IF = 100 mA IF = 10 mA VR = 10 V VR = 10 V, f = 1.0 MHz 6.0 Min Typ Max 0.55 0.34 30 Unit V V A pF Marking Marking D3L +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1