RB521S-30

S MD Type Schottky barrier diode RB521S-30 Diodes SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 0.6-0.1 1.2 +0.1 -0.1 Features IO = 200 mA guaranteed despite the size. Low VF.(VF = 0.40 V Typ. At 200 mA) +0.1 1.6-0.1 +0.05 0.8-0.05 Extremely Small surface mounting type.(EMD2) + - 0.77max 0.07max Absolute M axim um R atings T a = 25 P aram eter D C reverse voltage M ean rectifying current P eak forward surge current * Junction tem perature S torage tem perature * 60 H z for 1 S ym bol VR IO I F SM Tj T stg Lim its 30 200 1 150 -40 to +125 U nit V mA A E lectrical C haracteristics T a = 25 P aram eter F orw ard voltage R everse current S ym bol VF IR C onditions I F = 200 m A V R = 10V M in T yp M ax 0.6 1 U nit V A Marking Marking B +0.05 0.1-0.02 www.kexin.com.cn 1