SS36

SMD Type Diodes T Schottky Diodes SS32 ~ SS320 DO-214AB(SMC) Unit : mm 6.18 5.98 7.112 6.604 Ƶ Features 3.250 2.743 ƽ Metal silicon junction, majority carrier conduction 1 2 6.223 3.27 5.588 3.07 ƽ For surface mounted applications 4.69 4.49 7.67 7.47 8.128 7.747 ƽ Low power loss, high efficiency ƽ High forward surge current capability Recommended Land Pattern 2.616 2.007 ƽ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications 1.524 0.762 0.203 0.051 0.305 0.152 Ƶ Absolute Maximum Ratings and Electrical Characteristics Ratings at 25ć ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Symbol SS 32 SS 33 SS 34 SS 35 SS 36 SS 38 SS 310 SS 315 SS 320 200 Repetitive Peak Reverse Voltage VRRM 20 30 40 50 60 80 100 150 Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 Maximum average forward rectified currentat TL(see fig.1) I(AV) 3.0 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 70.0 Instantaneous Forward Voltage at 3A VF TA=25ć at rated DC blocking voltage TA=100ć Typical Junction Capacitance *1 Cj Typical thermal resistance *2 RthJA Storage Temperature range V A Maximum DC Reverse Current Operating junction temperature range Unit IR Tj Tstg 0.55 0.70 0.85 0.5 0.95 V 1 mA 20 10 500 300 55 -65 to 125 pF 62 -65 to 150 ć/W ć -65 to 150 * 1 Measured at 1MHz and applied reverse voltage of 4V D.C * 2 P.C.B. mounted with 2ą× 2ą(5×5 cm) copper pad areas. www.kexin.com.cn 1 SMD Type Diodes T Schottky Diodes SS32 ~ SS320 FIG. 1- FORWARD CURRENT DERATING CURVE 3.0 2.4 Single Phase Half Wave 60Hz Resistive or inductive Load 1.8 1.2 SS32-SS310 SS315-SS320 0.6 0 0 25 50 75 FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 100 £PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES Ƶ Typical Characterisitics 100 125 150 80 60 40 20 175 0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C 100 NUMBER OF CYCLES AT 60 Hz FIG. 4-TYPICAL REVERSE CHARACTERISTICS FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 1,000 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES TJ=25 C INSTANTANEOUS FORWARD CURRENT,AMPERES 10.0 1 SS32-SS34 SS35-SS310 SS315-SS320 0.1 100 10 TJ=75 C 1 0.1 TJ=25 C 0.01 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ=100 C 0 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% 1.6 INSTANTANEOUS FORWARD VOLEAGE, VOLTS JUNCTION CAPACITANCE, pF 1000 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, C/W FIG. 5-TYPICAL JUNCTION CAPACITANCE 2000 TJ=25 C 100 SS32-SS34 SS35-SS320 100 10 1 0.1 0.01 0.1 1 10 10 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 2 www.kexin.com.cn 100 t,PULSE DURATION,sec. 100