UMA1N

S MD Type Complex Digital Transistors UMA1N Transistors Features Mounting Cost and Area Can Be Cut In Half. Emitter-common Type. PNP Epitaxial Planar Silicon Transistor. Absolute Maximum Ratings Ta = 25 < For Tr1 and Tr2 in common > Parameter Supply Voltage Input Voltage Output Current Collector Current Power Dissipation Junction temperature Storage temperature * 120mW per element must not be exceeded. Symbol VCC VIN IO IC(Max) PD * Tj Tstg Rating -50 -40 to +10 -30 -100 150 150 -55 to +150 mW Unit V V mA Electrical Characteristics Ta = 25 < For Tr1 and Tr2 in common > Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transistion Frequency * Characteristics of built-in transistor Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT * VCE = -10V , IE = 5mA , f = 100MHz Testconditons VCC = -5V , IO = -100 A VO = -0.2V , IO = -5mA IO/II = -10mA/-0.5mA VI = -5V VCC = -50V , VI = 0V VO = -5V , IO = -5mA 56 15.4 0.8 22 1 250 28.6 1.2 MHz k -3 -0.1 -0.3 -0.36 -0.5 V mA A Min Typ Max -0.5 Unit V Marking Marking A1 www.kexin.com.cn 1 SMD Type UMA1N Transistors Equivalent Circuit Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type UMA1N Transistors www.kexin.com.cn 3