WP3DP3BT

PHOTOTRANSISTOR Part Number: WP3DP3BT Features
MECHANICALLY AND SPECTRALLY MATCHED TO THE Description Made with NPN silicon phototansistor chips. INFRARED EMITTING LED LAMP.
BLUE TRANSPARENT LENS.
RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. WJ 數位簽署者：WJ DN：cn=WJ, o, ou=SPEC專用, email=zhuwj@c n.kingbright.com, c= 日期︰2007.09.10 13:34:47 +08'00' SPEC NO: DSAH7501 APPROVED: WYNEC REV NO: V.1 CHECKED: Allen Liu DATE: SEP/10/2007 DRAWN: W.J.Hua PAGE: 1 OF 3 ERP: 1101003911 Electrical / Optical Characteristics at TA=25°C Symbol VBR CEO VBR ECO VCE (SAT) I CEO TR TF I (ON) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10％ to 90％ ) Fall Time (90％ to 10％ ) On State Collector Current 0.2 15 15 0.5 Min. 30 5 0.8 100 Typ. Max. Units V V V nA us us mA Test Conditions IC=100uA Ee=0mW/c ㎡ IE=100uA Ee=0mW/c ㎡ IC=2mA Ee=20mW/c ㎡ VCE=10V Ee=0mW/c ㎡ VCE = 5V IC=1mA RL=1000Ω VCE = 5V Ee=1mW/c ㎡ λ=940nm Absolute Maximum Ratings at TA=25°C Parameter Collector-to-Emitter Voltage Emitter-to-Collector Voltage Power Dissipation at (or below) 25°C Free Air Temperature Operating Temperature Storage Temperature Lead Soldering Temperature (>5mm for 5sec) Max.Ratings 30V 5V 100mW -40°C To +85°C -40°C To +85°C 260°C SPEC NO: DSAH7501 APPROVED: WYNEC REV NO: V.1 CHECKED: Allen Liu DATE: SEP/10/2007 DRAWN: W.J.Hua PAGE: 2 OF 3 ERP: 1101003911 PACKING & LABEL SPECIFICATIONS WP3DP3BT SPEC NO: DSAH7501 APPROVED: WYNEC REV NO: V.1 CHECKED: Allen Liu DATE: SEP/10/2007 DRAWN: W.J.Hua PAGE: 3 OF 3 ERP: 1101003911