KDS1001AF2_06

PIN Photodiode KDS1001AF2 The KDS1001AF2 is a high-output, high-speed silicon position sensitive diode for Automatic focusing of camera and sun sensor. The KDS1001AF2 have two active areas(photodiodes) integrated in one chip. Dimensions [Unit : mm] Features Laser beam focusing positioning is best performed High-speed response by PIN construction A1 ACTIVE AREA ACTIVE AREA DIMENSIONS Applications Automatic focusing of camera Sun sensor NOTE 1. GENERAL TOLERANCE : ±0.3 2. PIN CONFIGURATION A2 G.Tolerance : ±0.2 Absolute Maximum Ratings Parameter Reverse Voltage Power Dissipation Operating Temperature Storage Temperature Soldering Temperature *2 [TA = 25 Symbol VR PD Topr. Tstg. Tsol Rating 30 30 -40~+120 -45~+120 260 Unit V mW ] *1. Within +/- 10% compared to the initial output, after operation under the condition of 5V and 1K Ohm. *2. Within +/- 10% compared to the initial output, after leaving as it is without electrical load. *3. For MAX. 5 seconds at the position of 2 mm from the package. Electro-Optical Characteristics Parameter Open Circuit Voltage Short Circuit Current *5 Dark current Capacitance Spectral sensitivity Peak Wavelength Half Angle p VR=0V Symbol Voc Isc (A1) Isc (A2) ID Ct Conditions Ev=1000lx* 4 5 6 [TA = 25 Min. 18 18 Typ. 0.35 21 21 10 450~1,050 900 65 24 24 20 Max. Unit. V uA uA nA ㎊ nm nm deg. ] Ev=1000lx* Ev=1000lx* VR=10V VR=10V,f=1MHz -1- PIN Photodiode KDS1001AF2 (㎽) 50 Power Dissipation Vs. Ambient Temperature Short Circuit Current Isc (㎂) Short Circuit Current Vs. Illuminance Ta=25℃ Dark Current Vs. Ambient Temperature (㎀) 10 4 VR = 1V Power Dissipation(P D ) 40 30 20 10 0 10 1 10 0 Dark Current(Id) 10 2 10 3 Illuminance E V 10 4 (lx) 10 3 10 -1 10 2 0 20 40 60 80 100 (℃) Ambient Temperature(Ta) 10 -2 1 10 10 1 -20 0 20 40 60 80 100(℃) Ambient Temperature(Ta) (%) 100 Relative Sensitivity Vs. Wavelengh Ta=25℃ Dark Current Vs. Reverse Voltage (㎁) 10 3 Ta=25℃ Angle(deg.) Relative Intensity 0 +4 +20 0 -20 -4 0 +60 Dark Current(Id) 80 60 40 20 0 400 500 600 700 800 900 1000 1100(㎚) Wavelength(λ) 0 -6 50 +80 10 2 -80 -100 10 1 +100 0 100 10 0 0 5 10 15 20 Reverse Voltage VR 25 30 (V) 50 50 100 Relative intensity(%) Capacitance Between Terminals Vs. Reverse Voltage (㎊) Capacitance Between Terminals Ct 50 40 30 20 10 0 Ta=25℃ f=1㎒ 0 20 15 5 10 Reverse Voltage VR 25 (V) -2-