KDT3002A

Silicon photo transistor KDT3002A The KDT3002A is high sensitivity NPN silicon photo transistor mounted in Φ3mm(T-1) all plastic mold type. This photo transistor is both compact and easy to mount. Dimensions [Unit : mm] Features Higly sensitive photo transistor Visable ray cut off mold type Applications VCR, Camcoders Floppy disk drivers Optical detectors/switch Absolute Maximum Ratings Parameter Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature Soldering Temperature*1 [TA = 25 Symbol VCEO VECO IC PC Topr. Tstg. Tsol Rating 35 6 20 75 -20~+85 -30~+85 240 Unit V V mA mW ] Notes : 1. For MAX. 5 seconds at the position of 3 mm from the package. ELECTRO- OPTICAL CHARACTERISTICS Description Dark Current Light Current Spectral Sensitivity Peek wavelength Viewing Angle Response Time(Rise Time) Response Time(Fall Time) p ∆θ Symbol ICEO ICEL Condition VCE=10V, EE=0 VCE=10V, EV=500lx ※1 VR=0V - Min. 2.5 Typ. 5.0 700~1050 Max. 200 - Unit nA mA nm nm deg. ㎲ ㎲ - 880 ±30 2.5 4.7 - tr tf ※1 Color temp. =2856K Standard Tungsten lamp VCC=10V, Ic=1㎃ RL=100Ω -1- Silicon photo transistor KDT3002A DYNAMIC CHARACTERISTICS Power dissipation Vs. Ambient temperature 125 VCE=10V 101 VCE=5V Ta=25℃ Collector current Vs. Irradiance Collector current IC (mA) Dark current Vs. Ambient temperature Dark current ICEO (nA) 100 102 75 100 10 1 50 10-1 25 100 0 0 20 40 60 80 100 10 -2 10-2 10-1 100 2 101 10 -1 0 20 40 60 80 100 120 Ambient temperature Ta (℃) Irradiance Ee (mW/cm ) Ambient temperature Ta (℃) Collector current Vs. Collector-Emitter voltage 1.0 Ta=25℃ Ee=3.0mW/cm 2 Relative sensitivity Vs. Wavelength Ta=25℃ Radiant pattern Relative sensitivity S (%) Ee=2.5mW/cm 2 0.8 Ee=2.0mW/cm 0.6 Ee=1.5mW/cm 0.4 Ee=1.0mW/cm 0.2 Ee=0.5mW/cm 2 2 2 Angle (deg.) +2 0 100 80 +6 0 0 -20 Ta=25℃ 0 +4 -4 0 -60 60 40 20 0 50 -80 +80 0 -100 +100 50 100 50 100 2 0 0 2 4 6 8 10 400 500 600 700 800 900 1000 1100 Collector-Emitter voltage VCE (V) Wavelength λ (nm) Relative intensity (%) Response time Vs. Load resistance 103 VCE=2V IC=2mA Ta=25℃ ※ Swi tchi ng ti me me asuremen t circuit VCC IF VOU T IC 10 2 RL tf 101 tr INPUT OUTPUT tr tf 90% 10% 10 0 102 103 104 105 Load resistance RL (Ω) -2-