KDT5001A_0604

Silicon photo transistor KDT5001A The KDT5001A is high sensitivity silicon photo transistor which converts light to electrical signal. This photo transistor is both COB package and easy to mount. Dimensions [Unit : mm] Features Higly sensitive photo transistor Chip On Board package. High speed response. Applications AV Instrumemts Touch panels for ATM & FA epuiments Optical counter Pin Description ① EMITTER ② COLECTOR Absolute Maximum Ratings Parameter Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature Soldering Temperature* 1 [TA = 25 Symbol VCEO VECO IC PC Topr. Tstg. Tsol Rating 30 5 20 75 -5~+50 -20~+80 240 Unit ] V V mA mW *1.Test Condition : t ≤ 3s ELECTRO- OPTICAL CHARACTERISTICS Description Dark Current Photo Current Symbol ICEO IPCE Condition VCE=10V, EE=0 VCE=5V, EE=0.5㎽/㎠, PK=640㎚ Min. 1.2 Typ. 500~1050 Max. 100 2.4 Unit nA mA nm nm Spectral Sensitivity Peek wavelength Viewing Angle Collector-Emitter Saturation Voltage 2 p 1/2 VR=0V 20 IC=100 , EE=0.5mW/cm , PK=640nm 2 880 40 200 deg. mV VCE(SAT) - -1- Silicon photo transistor KDT5001A DYNAMIC CHARACTERISTICS Collector Current vs Collector-Emitter Voltage Collector Current IC (㎃) 4 3 2 1 Power Dissipation vs Ambient Power Dissipation PC (㎽) 100 75 50 25 0 0 20 40 60 80 100 EE=1.25㎽/㎠ EE=1.0㎽/㎠ EE=0.75㎽/㎠ EE=0.5㎽/㎠ Ta=25℃ Collector-Emitter Voltage VCE (V) 0 2 4 6 8 10 Ambient Temperature Ta Dark Current vs Ambient Temperature Dark Current ICEO (㎁) Collector Current vs Illuminance Collector Current IC (㎃) 102 101 100 10-1 0 20 40 60 80 100 120 Ambient Temperature Ta (℃) 10 10 10 1010- 10- 10 10 Irradiance EE (㎽/㎠) Sensitivity Diagram Angular Displacement Angle(deg.) Spectral Sensitivity Characteristic Relative Intensity (%) Ta=25℃ 100 80 60 40 20 0 400 500 600 700 800 900 1000 1100 0 +4 +20 0 Ta=25℃ - 20 -4 0 0 -6 +60 50 -80 -100 +80 +100 0 100 50 50 100 Wavelength λ ( ㎚) -2- Relative Output (%)