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KDTD001

KDTD001

  • 厂商:

    KODENSHI(可天士)

  • 封装:

  • 描述:

    KDTD001 - Photo transistors - KODENSHI KOREA CORP.

  • 数据手册
  • 价格&库存
KDTD001 数据手册
Photo transistors KDTD001 The KDTD001, a high-sensitivity NPN silicon phototransistor mounted in a 2nd Mold package is compact, low profile and easy to mount. Dimensions [Unit : mm] Features Low profile package Side-looking with plastic package RoHS Compliance Small 2nd Mold Package Applications OA machines Photointerrupter G.Tolerance : 0.2 Absolute Maximum Ratings Parameter C-E Voltage E-C Voltage Collector current Collector power dissipation Operating temp Storage temp Soldering temp Symbol VCEO VECO IC PC Topr. Tstg. Tsol Rating 30 6 20 75 [TA = 25 ] Unit V V mA mW -25~+85 -30~+100 260 *1. For MAX.5 seconds at the position of 2mm from the package Electro-Optical Characteristics Parameter Collector dark current Light current C-E saturation voltage Switching speeds Spectral sensitivity Peak wavelength Half Angle p Rise time Fall time Symbol ICEO IL VCE(sat) tr tf Conditions VCEO=10V VCE=5V, 1,000lx IC=0.5mA, 2,000lx VCC=10V,IC=5mA RL=100 [TA = 25 Min. Typ. 1.2 0.2 3.2 3.2 500~1,050 880 15 Max. 100 nm nm degrees Unit. nA mA V ] -1- Photo transistors KDTD001 Collector current Vs. Collector-Emitter voltage Collector current(I C ) Ee=2.0㎽/㎠ (㎃) (mA) Collector current Vs. Illuminance Collector dark current(ICEO ) Dark current Vs. Ambient temperature 102 Collector current(I C ) 8 Ee=1.5㎽/㎠ 10 2 6 Ee=1.0㎽/㎠ 10 1 101 4 Ee=0.5㎽/㎠ 2 0 10 0 10 0 0 2 4 6 8 (V) Collector-Emitter Voltage(VCE) 10 -1 1 10 10-1 10 10 10 Illminance(E V ) 2 3 4 ( 0 20 40 60 80 100 120 Ambient temperature(Ta) (%) Relative sensitivity Vs. Wavelength (㎲) Switching time Vs. Load resistance Response time tr, tf 10 3 VCE = 5V IC = 1mA Ta=25℃ tr Sensitivity Diagram Angular Angle(deg.) Spectral Sensitivity 100 80 60 40 20 10 2 tf 0 +4 +20 0 -20 Ta=25℃ -4 0 -6 +60 50 0 -80 -100 10 1 +80 +100 0 0 400 500 600 700 800 900 1000 1100(㎚) Wavelength( λ) 10 0 10 2 10 10 10 Road Resistance(R L ) 3 4 5 () Ω 100 50 50 100 Relative intensity(%) Collector power dissipation Vs. Ambient temperature (㎽) Power dissipation(P C ) 100 Switching time measurement circuit IFP IC RL VCC VOUT 50 Input Output 0 tr 90% 10% tf 0 20 40 60 80 100 Ambient temperature(Ta) -2-
KDTD001 价格&库存

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