Infrared Emitting Diodes(GaAs)
KODENSHI
KEL55L
DIMENSIONS
The KEL55L is a high-power GaAs IRED mounted in a clear plastic package. This LED emits infrared light through two plastic lenses on both sides of the package is ideally suited for use with VTR tape-end sensors.
(Unit : mm)
FEATURES
•Compact •Low profile package •Low-cost •Sidelooking plastic package •Long-lead type
APPLICATIONS
•VTR type-end sensor
MAXIMUM RATINGS
Item
Reverse voltage Forward current Pulse forward current *1 Power dissipation Operating temp. Storage temp. Soldering temp. *2
(Ta=25℃)
Symbol
VR IF IFP PD Topr. Tstg. Tsol.
Rating
5 50 1 75 -25~+85 -30~+85 260
Unit
V mA A mW ℃ ℃ ℃
*1. pulse width :tw ≦100 μ sec.period :T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle
(Ta=25℃)
Symbol
VF IR Ct PO λp Δλ △θ
Conditions
IF=50mA VR=5V f=1MHz IF=20mA IF=20mA IF=20mA
Min.
Typ.
1.3 25 2.0 940 50 -
Max.
1.5 10
Unit.
V μ A pF mW/sr nm nm deg.
0.7 -
-
- 1-
Infrared Emitting Diodes(GaAs)
KEL55L
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward voltage
Radiant Pattern
- 2-
很抱歉,暂时无法提供与“KEL55L”相匹配的价格&库存,您可以联系我们找货
免费人工找货 - 国内价格 香港价格
- 1+ 23.1716 1+ 2.9512
- 10+ 22.0871 10+ 2.8131
- 25+ 19.8131 25+ 2.5234
- 50+ 18.2154 50+ 2.32
- 100+ 16.7927 100+ 2.1388
- 250+ 15.2767 250+ 1.9457
- 500+ 14.9502 500+ 1.9041