KIP-M3M-1

Optical Monitoring Photodiode Chip for KIP-MxM KIP-MxM Description KIP-MxM-1 is InGaAs PIN Photodiode chip with BIG size active diameter(Ø1.0mm,Ø2.0mm,Ø3.0mm). It is recommended for Laser diode life test and optical power monitoring. Features Front illuminated planar PIN-PD ● High reliability and environmental endurance ● Wide spectral response range from 0.9 um to 1.6 um ● KIP-M1M KIP-M2M KIP-M3M Applications Laser diode power monitoring ● Laser diode life test ● Absolute Maximum Ratings Parameter Symbol Ratings Unit VR max. 10 V Reverse Voltage Topr Operating Temperature -40 ~ +85 ℃ Tstg. Storage Temperature -40 ~ +100 ℃ Tsol. Soldering Temperature *1 260 ℃ *1 : Soldering Time ≤ 10 seconds (At a distance of 1 mm from the package). Electro-Optical Characteristics KIP - M1M - 1 KIP - M2M - 1 KIP - M3M - 1 Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. ID Dark Current 1.0 5.0 2.0 10.0 10.0 50.0 nA 1.31um 0.85 0.85 0.85 Responsivity S mA/mW 1.55um 0.90 0.90 0.90 fC 3dB Cut off frequency 2 4 MHz 18 35 4 8 CT Terminal Capacitance 250 500 pF 90 150 550 1000 * These specifications are subject to change without notice. Parameter Symbol Unit Condition @ VR=5V, 25℃ @ VR=5V, 25℃ @VR=5V, RL=50Ω @ VR=5V, f=1MHz Physical Dimension Properties Parameter Active area Chip out dimension bonding Pad Size Chip Thickness Ordering information KIP KODENSHI InGaAs PIN Photodiode Chip Symbol Ø Sq Ø t KIP - M1M - 1 Typ. 1.0 1.4 x 1.4 KIP - M2M - 1 Typ. 2.0 2.4 x 2.4 100 150 KIP - M3M - 1 Typ. 3.0 3.6 x 3.6 Unit ㎜ ㎟ ㎛ ㎛ Data Rate M: Monitoring Active area 1M: Ø1.0 ㎜ 2M: Ø2.0 ㎜ 3M: Ø3.0 ㎜ Carrier type 1: chips in gel pack 2: chips on submounter 3: chips on blue tape The engineering spec can be revised without any previous notice. When customer's applying, please request us a revised specification before submitting the specification to the customers. 1/2 Rev.001 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea Optical Monitoring Photodiode Chip for KIP-MxM KIP-MxM ■ Spectral response range ■ Dark current vs Reverse voltage (Typ. Ta=25℃) 100 10 D ark Current (uA) 1 0.1 0.01 1E-3 1E-4 0 KIP-M1M KIP-M2M KIP-M3M 20 40 60 Reverse Bias Voltage (V) ■ -3dB Cutoff Frequency (Typ. Ta=25℃) -20 KIP-M1M KIP-M2M KIP-M3M ■ Dark Current vs Operating Temperature (Typ. Ta=25℃) 1000 Dark Current (nA) 100 -30 Gain (dB) 10 -40 1 KIP-M1M KIP-M2M KIP-M3M -50 1 10 100 0.1 0 20 40 60 80 100 Frequency (MHz) Temperature (℃) ■ Chip out dimension (unit:mm) Ø3.0 Ø2.0 Ø1.0 Ø0.1 Ø 0.1 Ø0.1 ㅁ1.4 ㅁ2.4 KIP-M2M ㅁ3.6 KIP-M3M KIP-M1M The engineering spec can be revised without any previous notice. When customer's applying, please request us a revised specification before submitting the specification to the customers. For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea 2/2 Rev.001