KK74ACT620N

KK74ACT620N

  • 厂商:

    KODENSHI(可天士)

  • 封装:

  • 描述:

    KK74ACT620N - Octal 3-State Inverting Bus Transceiver High-Speed Silicon-Gate CMOS - KODENSHI KOREA ...

  • 详情介绍
  • 数据手册
  • 价格&库存
KK74ACT620N 数据手册
TECHNICAL DATA KK74ACT620 Octal 3-State Inverting Bus Transceiver High-Speed Silicon-Gate CMOS The KK74ACT620 is identical in pinout to the LS/ALS620, HC/HCT620. The KK74ACT620 may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. The KK74ACT620 is a 3-state transceiver that is used for 2-way communication between data buses. Two separate enables are available. The enable for bus A to B is active-high, the enable for bus B to A is active-low. • TTL/NMOS Compatible Input Levels • Outputs Directly Interface to CMOS, NMOS, and TTL • Operating Voltage Range: 4.5 to 5.5 V • Low Input Current: 1.0 µA; 0.1 µA @ 25°C • Outputs Source/Sink 24 mA ORDERING INFORMATION KK74ACT620N Plastic KK74ACT620DW SOIC TA = -40° to 85° C for all packages PIN ASSIGNMENT LOGIC DIAGRAM FUNCTION TABLE Control Inputs Output Enable L PIN 20=VCC PIN 10 = GND H H Direction L Operation Data Transmitted from Bus B to Bus A (inverted) Data Transmitted from Bus A to Bus B (inverted) Buses Isolated (High Impedance State) H L L H 1 KK74ACT620 MAXIMUM RATINGS* Symbol VCC VIN VOUT IIN IOUT ICC PD Tstg TL * Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Sink/Source Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +7.0 -0.5 to VCC +0.5 -0.5 to VCC +0.5 ±20 ±50 ±50 750 500 -65 to +150 260 Unit V V V mA mA mA mW °C °C Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TJ TA IOH IOL tr, tf * Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Junction Temperature (PDIP) Operating Temperature, All Package Types Output Current - High Output Current - Low Input Rise and Fall Time (except Schmitt Inputs) * Min 4.5 0 -40 Max 5.5 VCC 140 +85 -24 24 Unit V V °C °C mA mA ns/V VCC =4.5 V VCC =5.5 V 0 0 10 8.0 VIN from 0.8 V to 2.0 V This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 2 KK74ACT620 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) VCC Symbol VIH VIL VOH Parameter Minimum HighLevel Input Voltage Maximum Low Level Input Voltage Minimum HighLevel Output Voltage Test Conditions VOUT= 0.1 V or VCC-0.1 V VOUT= 0.1 V or VCC-0.1 V IOUT ≤ -50 µA VIN=VIH or VIL IOH=-24 mA IOH=-24 mA VOL Maximum LowLevel Output Voltage IOUT ≤ 50 µA * * Guaranteed Limits 2 5 °C 2.0 2.0 0.8 0.8 4.4 5.4 3.86 4.86 0.1 0.1 0.36 0.36 ±0.1 -40°C to 8 5 °C 2.0 2.0 0.8 0.8 4.4 5.4 3.76 4.76 0.1 0.1 0.44 0.44 ±1.0 1.5 ±0.6 ±6.0 µA mA µA V Unit V V V V 4.5 5.5 4.5 5.5 4.5 5.5 4.5 5.5 4.5 5.5 4.5 5.5 5.5 5.5 5.5 VIN= VIH or VIL IOL=24 mA IOL=24 mA VIN=VCC or GND VIN=VCC - 2.1 V IIN ∆ICCT IOZ Maximum Input Leakage Current Additional Max. ICC/Input Maximum ThreeState Leakage Current +Minimum Dynamic Output Current +Minimum Dynamic Output Current Maximum Quiescent Supply Current (per Package) VIN (OE)= VIH or VIL VIN =VCC or GND VOUT =VCC or GND VOLD=1.65 V Max VOHD=3.85 V Min VIN=VCC or GND IOLD IOHD ICC 5.5 5.5 5.5 8.0 75 -75 80 mA mA µA * All outputs loaded; thresholds on input associated with output under test. +Maximum test duration 2.0 ms, one output loaded at a time. 3 KK74ACT620 AC ELECTRICAL CHARACTERISTICS (VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=3.0 ns) Guaranteed Limits Symbol tPLH tPHL tPZH tPZL tPHZ tPLZ CIN Parameter Propagation Delay, A to B , B to A (Figure 1) Propagation Delay, A to B , B to A (Figure 1) Propagation Delay, Direction or Output Enable to A or B (Figure 2) Propagation Delay, Direction or Output Enable to A or B (Figure 2) Propagation Delay, Direction or Output Enable to A or B (Figure 2) Propagation Delay, Direction or Output Enable to A or B (Figure 2) Maximum Input Capacitance 2 5 °C Min 1.5 1.5 1.5 1.5 1.5 1.5 4.5 Max 7.5 8.0 10.0 10.0 10.0 10.0 -40°C to 85°C Min 1.0 1.0 1.0 1.0 1.0 1.0 4.5 Max 8.5 9.0 11.0 12.0 11.0 11.0 ns ns ns ns ns ns pF Unit Typical @25°C,VCC=5.0 V CPD Power Dissipation Capacitance 45 pF Figure 1. Switching Waveforms Figure 2. Switching Waveforms 4 KK74ACT620 EXPANDED LOGIC DIAGRAM 5 KK74ACT620 N S UFFIX PLAS TIC DIP (MS - 0 0 1 AD) A Dimens ion, mm 20 11 B 1 10 Symbol A B C MIN 24.89 6.1 MAX 26.92 7.11 5.33 F L D F 0.36 1.14 2.54 7.62 0° 2.92 7.62 0.2 0.38 0.56 1.78 C -T- SEATING PLAN E G H H J N G D 0.25 (0.010) M T K M J K L M N 10° 3.81 8.26 0.36 NOTES : 1. Dimen s io n s “A ”, “B” d o n o t in clu d e mo ld flas h o r p ro tru s io n s . Maximu m mo ld flas h o r p ro tru s io n s 0.25 mm (0.010) p er s id e. D S UFFIX S OIC (MS - 0 1 3 AC) A 20 11 Dimens ion, mm Symbol MIN 12.6 7.4 2.35 0.33 0.4 1.27 9.53 0° 0.1 0.23 10 0.25 8° 0.3 0.32 10.65 0.75 MAX 13 7.6 2.65 0.51 1.27 H B P A B 1 G 10 C R x 45 C D F -TD 0.25 (0.010) M T C M K SE AT IN G PL AN E J F M G H J K M P R NOTES : 1. Dimen s io ns A an d B d o n o t in clud e mo ld flas h o r p ro tru s ion . 2. M aximu m mo ld flas h o r p ro tru s io n 0.15 mm (0.006) p er s id e fo r A ; fo r B ‑ 0.25 mm (0.010) p er s id e. 6
KK74ACT620N
1. 物料型号: - KK74ACT620N:塑料封装 - KK74ACT620DW:SOIC封装

2. 器件简介: - KK74ACT620是一款八路3态反相总线收发器,采用高速硅门CMOS工艺。该器件与LS/ALS620、HC/HCT620引脚兼容,可用于将TTL或NMOS输出电平转换为高速CMOS输入电平。

3. 引脚分配: - 引脚20为Vcc(电源电压) - 引脚10为GND(地)

4. 参数特性: - 工作电压范围:4.5V至5.5V - 存储温度:-65℃至+150℃ - 引脚温度:260℃(1mm距离处,持续10秒) - 电源电流:±50mA - 输入电流:1.0µA;25°C时为0.1µA - 输出源/汇电流:24mA

5. 功能详解: - 该器件为3态收发器,用于两个数据总线之间的双向通信。具有两个独立的使能信号,A到B的使能为高电平有效,B到A的使能为低电平有效。

6. 应用信息: - 直接与CMOS、NMOS和TTL接口兼容

7. 封装信息: - 提供了塑料DIP和SOIC两种封装类型的尺寸信息,包括最小和最大尺寸。
KK74ACT620N 价格&库存

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