KK74HC640AN

TECHNICAL DATA KK74HC640A Octal 3-State Inverting Bus Transceiver High-Performance Silicon-Gate CMOS The KK74HC640A is identical in pinout to the LS/ALS640. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs. The KK74HC640A is a 3-state transceiver that is used for 2-way asynchronous communication between data buses. The device has an active-low Output Enable pin, which is used to place the I/O ports into high-impedance states. The Direction control determines whether data flows from A to B or from B to A. • Outputs Directly Interface to CMOS, NMOS, and TTL • Operating Voltage Range: 2.0 to 6.0 V • Low Input Current: 1.0 µA • High Noise Immunity Characteristic of CMOS Devices ORDERING INFORMATION KK74HC640AN Plastic KK74HC640ADW SOIC TA = -55° to 125° C for all packages PIN ASSIGNMENT LOGIC DIAGRAM FUNCTION TABLE Control Inputs PIN 20=VCC PIN 10 = GND Output Enable L Direction L Operation Data Transmitted from Bus B to Bus A (inverted) Data Transmitted from Bus A to Bus B (inverted) Buses Isolated (High Impedance State) L H H X X = don’t care 1 KK74HC640A MAXIMUM RATINGS* Symbol VCC VIN VOUT IIN IOUT ICC PD Tstg TL * Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +7.0 -1.5 to VCC +1.5 -0.5 to VCC +0.5 ±20 ±35 ±75 750 500 -65 to +150 260 Unit V V V mA mA mA mW °C °C Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA tr, tf Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) VCC =2.0 V VCC =4.5 V VCC =6.0 V Min 2.0 0 -55 0 0 0 Max 6.0 VCC +125 1000 500 400 Unit V V °C ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. I/O pins must be connected to a properly terminated line or bus. 2 KK74HC640A DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) VCC Symbol Parameter Test Conditions V Guaranteed Limit 2 5 °C to -55°C 1.5 3.15 4.2 0.3 0.9 1.2 1.9 4.4 5.9 3.98 5.48 0.1 0.1 0.1 0.26 0.26 ±0.1 ±0.5 ≤85 °C 1.5 3.15 4.2 0.3 0.9 1.2 1.9 4.4 5.9 3.84 5.34 0.1 0.1 0.1 0.33 0.33 ±1.0 ±5.0 ≤125 °C 1.5 3.15 4.2 0.3 0.9 1.2 1.9 4.4 5.9 3.7 5.2 0.1 0.1 0.1 0.4 0.4 ±1.0 ±10 µA µA V Unit VIH Minimum HighLevel Input Voltage Maximum Low Level Input Voltage Minimum HighLevel Output Voltage VOUT=0.1 V or VCC-0.1 V ⎢IOUT⎢≤ 20 µA VOUT=0.1 V or VCC-0.1 V ⎢IOUT⎢ ≤ 20 µA VIN=VIH or VIL ⎢IOUT⎢ ≤ 20 µA VIN=VIH or VIL ⎢IOUT⎢ ≤ 6.0 mA ⎢IOUT⎢ ≤ 7.8 mA 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 6.0 6.0 V VIL V VOH V VOL Maximum LowLevel Output Voltage VIN= VIL or VIH ⎢IOUT⎢ ≤ 20 µA VIN= VIL or VIH ⎢IOUT⎢ ≤ 6.0 mA ⎢IOUT⎢ ≤ 7.8 mA IIN IOZ Maximum Input Leakage Current Maximum ThreeState Leakage Current Maximum Quiescent Supply Current (per Package) VIN=VCC or GND, Pin 1 or 19 Output in High-Impedance State VIN= VIL or VIH VOUT=VCC or GND VIN=VCC or GND IOUT=0µA ICC 6.0 4.0 40 160 µA 3 KK74HC640A AC ELECTRICAL CHARACTERISTICS (CL=50pF,Input tr=tf=6.0 ns) VCC Symbol Parameter V Guaranteed Limit 2 5 °C to -55°C 75 15 13 110 22 19 110 22 19 60 12 10 10 15 ≤85°C ≤125°C Unit tPLH, tPHL Maximum Propagation Delay, A to B , B to A (Figures 1 and 3) Maximum Propagation Delay , Direction or Output Enable to A or B (Figures 2 and 4) Maximum Propagation Delay , Direction or Output Enable to A or B (Figures 2 and 4) Maximum Output Transition Time, Any Output (Figures 1 and 3) Maximum Input Capacitance (Pin 1 or Pin 19) Maximum Three-State I/O Capacitance (Output in High-Impedance State) Power Dissipation Capacitance (Per Transceiver Channel) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 - 95 19 16 140 28 24 140 28 24 75 15 13 10 15 110 22 19 165 33 28 165 33 28 90 18 15 10 15 ns tPLZ, tPHZ ns tPZL, tPZH ns tTLH, tTHL ns CIN COUT pF pF Typical @25°C,VCC=5.0 V 40 pF CPD Used to determine the no-load dynamic power consumption: PD=CPDVCC2f+ICCVCC Figure 1. Switching Waveforms Figure 2. Switching Waveforms 4 KK74HC640A Figure 3. Test Circuit Figure 4. Test Circuit EXPANDED LOGIC DIAGRAM 5 KK74HC640A N S UFFIX PLAS TIC DIP (MS - 0 0 1 AD) A Dimens ion, mm 20 11 B 1 10 Symbol A B C MIN 24.89 6.1 MAX 26.92 7.11 5.33 F L D F 0.36 1.14 2.54 7.62 0° 2.92 7.62 0.2 0.38 0.56 1.78 C -T- SEATING PLAN E G H H J N G D 0.25 (0.010) M T K M J K L M N 10° 3.81 8.26 0.36 NOTES : 1. Dimen s io n s “A ”, “B” d o n o t in clu d e mo ld flas h o r p ro tru s io n s . Maximu m mo ld flas h o r p ro tru s io n s 0.25 mm (0.010) p er s id e. D S UFFIX S OIC (MS - 0 1 3 AC) A 20 11 Dimens ion, mm Symbol MIN 12.6 7.4 2.35 0.33 0.4 1.27 9.53 0° 0.1 0.23 10 0.25 8° 0.3 0.32 10.65 0.75 MAX 13 7.6 2.65 0.51 1.27 H B P A B 1 G 10 C R x 45 C D F -TD 0.25 (0.010) M T C M K SE AT IN G PL AN E J F M G H J K M P R NOTES : 1. Dimen s io ns A an d B d o n o t in clud e mo ld flas h o r p ro tru s ion . 2. M aximu m mo ld flas h o r p ro tru s io n 0.15 mm (0.006) p er s id e fo r A ; fo r B ‑ 0.25 mm (0.010) p er s id e. 6