TECHNICAL DATA
KK74HCT08A
Quad 2-Input AND Gate
High-Performance Silicon-Gate CMOS
The KK74HCT08A may be used as a level converter for intertacing TTL or NMOS outputs to high-speed CMOS inputs. The KK74HCT08A is identical in pinout to the LS/ALS08. • TTL/NMOS-Compatible Input Levels. • Outputs Directly Interface to CMOS, NMOS, and TTL • Operating Voltage Range: 4.5 to 5.5 V • Low Input Current: 1.0 µA
ORDERING INFORMATION KK74HCT08AN Plastic KK74HCT08AD SOIC TA = -55° to 125° C for all packages
LOGIC DIAGRAM PIN ASSIGNMENT
FUNCTION TABLE
Inputs A L PIN 14 =VCC PIN 7 = GND L H H B L H L H Output Y L L L H
1
KK74HCT08A
MAXIMUM RATINGS*
Symbol VCC VIN VOUT IIN IOUT ICC PD Tstg TL
*
Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package)
Value -0.5 to +7.0 -1.5 to VCC +1.5 -0.5 to VCC +0.5 ±20 ±25 ±50 750 500 -65 to +150 260
Unit V V V mA mA mA mW °C °C
Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VIN, VOUT TA tr, tf Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) Min 4.5 0 -55 0 Max 5.5 VCC +125 500 Unit V V °C ns
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
2
KK74HCT08A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
VCC Symbol Parameter Test Conditions V Guaranteed Limit 2 5 °C to -55°C 2.0 2.0 0.8 0.8 4.4 5.4 3.98 0.1 0.1 0.26 ±0.1 1.0 ≤85 °C 2.0 2.0 0.8 0.8 4.4 5.4 3.84 0.1 0.1 0.33 ±1.0 10 ≤125 °C 2.0 2.0 0.8 0.8 4.4 5.4 3.7 0.1 0.1 0.4 ±1.0 40 µA µA V Unit
VIH VIL VOH
Minimum HighLevel Input Voltage Maximum Low Level Input Voltage Minimum HighLevel Output Voltage
VOUT=0.1 V or VCC-0.1 V ⎢IOUT⎢≤ 20 µA VOUT=0.1 V ⎢IOUT⎢ ≤ 20 µA VIN=VIH ⎢IOUT⎢ ≤ 20 µA VIN=VIH ⎢IOUT⎢ ≤ 4.0 mA
4.5 5.5 4.5 5.5 4.5 5.5 4.5 4.5 5.5 4.5 5.5 5.5
V V V
VOL
Maximum LowLevel Output Voltage
VIN=VIH or VIL ⎢IOUT⎢ ≤ 20 µA VIN=VIH or VIL ⎢IOUT⎢ ≤ 4.0 mA
IIN ICC
Maximum Input Leakage Current Maximum Quiescent Supply Current (per Package) Additional Quiescent Supply Current
VIN=VCC or GND VIN=VCC or GND IOUT=0µA VIN = 2.4 V, Any One Input VIN=VCC or GND, Other Inputs IOUT=0µA
∆ICC
≥-55°C
25°C to 125°C 2.4
mA
5.5
2.9
3
KK74HCT08A
AC ELECTRICAL CHARACTERISTICS (VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limits Symbol tPLH, tPHL Parameter Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2) Maximum Output Transition Time, Any Output (Figures 1 and 2) Maximum Input Capacitance 25 °C to -55°C 19 ≤85°C 24 ≤125°C 28 Unit ns
tTLH, tTHL CIN
15 10
19 10
22 10
ns pF
Power Dissipation Capacitance (Per Gate) CPD Used to determine the no-load dynamic power consumption: PD=CPDVCC2f+ICCVCC
Typical @25°C,VCC=5.0 V 20 pF
Figure 1. Switching Waveforms.
Figure 2. Test Circuit
EXPANDED LOGIC DIAGRAM (1/4 of the Device)
4
KK74HCT08A
N S UFFIX PLAS TIC DIP (MS - 0 0 1 AA)
A 14 8 B 1 7
Dimens ion, mm Symbol A B C MIN 18.67 6.1 MAX 19.69 7.11 5.33 0.36 1.14 2.54 7.62 0° 2.92 7.62 0.2 0.38 10° 3.81 8.26 0.36 0.56 1.78
F
L
D F
C -T- SEATING N G D 0.25 (0.010) M T K
PLAN E
G H
H J
M
J K L M N
NOTES : 1. Dimen s io n s “A ”, “B” d o n o t in clu d e mo ld flas h o r p ro tru s io n s . Maximu m mo ld flas h o r p ro tru s io n s 0.25 mm (0.010) p er s id e.
D S UFFIX S OIC (MS - 0 1 2 AB) Dimens ion, mm
8
A 14
Symbol A
MIN 8.55 3.8 1.35 0.33 0.4 1.27 5.27 0° 0.1 0.19 5.8 0.25
MAX 8.75 4 1.75 0.51 1.27
H
B
P
B C
1
G
7 C R x 45
D F G
-TD 0.25 (0.010) M T C M K
SEATING PLAN E
H
J F M
J K M P R
8° 0.25 0.25 6.2 0.5
NOTES : 1. Dimen s io ns A an d B d o n o t in clud e mo ld flas h o r p rotru s ion . 2. M aximu m mo ld flas h o r p ro tru s io n 0.15 mm (0.006) p er s id e fo r A ; fo r B ‑ 0.25 mm (0.010) p er s id e.
5
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