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KK74HCT10AN

KK74HCT10AN

  • 厂商:

    KODENSHI(可天士)

  • 封装:

  • 描述:

    KK74HCT10AN - Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS - KODENSHI KOREA CORP.

  • 详情介绍
  • 数据手册
  • 价格&库存
KK74HCT10AN 数据手册
TECHNICAL DATA KK74HCT10A Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS The KK74HCT10A is identical in pinout to the LS/ALS10. The KK74HCT10A may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. • TTL/NMOS Compatible Input Levels • Outputs Directly Interface to CMOS, NMOS, and TTL • Operating Voltage Range: 4.5 to 5.5 V • Low Input Current: 1.0 µA ORDERING INFORMATION KK74HCT10AN Plastic KK74HCT10AD SOIC TA = -55° to 125° C for all packages LOGIC DIAGRAM PIN ASSIGNMENT FUNCTION TABLE Inputs A PIN 14 =VCC PIN 7 = GND L X X H B X L X H C X X L H Output Y H H H L X = don’t care 1 KK74HCT10A MAXIMUM RATINGS* Symbol VCC VIN VOUT IIN IOUT ICC PD Tstg TL * Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin DC Output Current, per Pin DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +7.0 -1.5 to VCC +1.5 -0.5 to VCC +0.5 ±20 ±25 ±50 750 500 -65 to +150 260 Unit V V V mA mA mA mW °C °C Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA tr, tf Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) Min 4.5 0 -55 0 Max 5.5 VCC +125 500 Unit V V °C ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 2 KK74HCT10A DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) VCC Symbol Parameter Test Conditions V Guaranteed Limit 2 5 °C to -55°C 2.0 2.0 0.8 0.8 4.4 5.4 3.98 0.1 0.1 0.26 ±0.1 2.0 ≤85 °C 2.0 2.0 0.8 0.8 4.4 5.4 3.84 0.1 0.1 0.33 ±1.0 20 ≤125 °C 2.0 2.0 0.8 0.8 4.4 5.4 3.7 0.1 0.1 0.4 ±1.0 40 µA µA V Unit VIH VIL VOH Minimum HighLevel Input Voltage Maximum Low Level Input Voltage Minimum HighLevel Output Voltage VOUT=0.1 V or VCC-0.1 V ⎢IOUT⎢≤ 20 µA VOUT=0.1 V or VCC-0.1 V ⎢IOUT⎢ ≤ 20 µA VIN=VIH or VIL ⎢IOUT⎢ ≤ 20 µA VIN=VIH or VIL ⎢IOUT⎢ ≤ 4.0 mA 4.5 5.5 4.5 5.5 4.5 5.5 4.5 4.5 5.5 4.5 5.5 5.5 V V V VOL Maximum LowLevel Output Voltage VIN=VIH ⎢IOUT⎢ ≤ 20 µA VIN=VIH ⎢IOUT⎢ ≤ 4.0 mA IIN ICC Maximum Input Leakage Current Maximum Quiescent Supply Current per Package) Additional Quiescent Supply Current VIN=VCC or GND VIN=VCC or GND IOUT=0µA VIN = 2.4 V, Any One Input VIN=VCC or GND, Other Inputs IOUT=0µA ∆ICC ≥-55°C 25°C to 125°C 2.4 mA 5.5 2.9 3 KK74HCT10A AC ELECTRICAL CHARACTERISTICS (VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns) Guaranteed Limit Symbol Parameter 2 5 °C to -55°C 19 15 10 ≤85°C ≤125°C Unit tPLH, tPHL tTLH, tTHL CIN Maximum Propagation Delay, Input A,B or C to Output Y (Figures 1 and 2) Maximum Output Transition Time, Any Output (Figures 1 and 2) Maximum Input Capacitance Power Dissipation Capacitance (Per Gate) 24 19 10 29 22 10 ns ns pF Typical @25°C,VCC=5.0 V 27 pF CPD Used to determine the no-load dynamic power consumption: PD=CPDVCC2f+ICCVCC Figure 1. Switching Waveforms Figure 2. Test Circuit EXPANDED LOGIC DIAGRAM (1/3 of the Device) 4 KK74HCT10A N S UFFIX PLAS TIC DIP (MS - 0 0 1 AA) A 14 8 B 1 7 Dimens ion, mm Symbol A B C MIN 18.67 6.1 MAX 19.69 7.11 5.33 0.36 1.14 2.54 7.62 0° 2.92 7.62 0.2 0.38 10° 3.81 8.26 0.36 0.56 1.78 F L D F C -T- SEATING N G D 0.25 (0.010) M T K PLAN E G H H J M J K L M N NOTES : 1. Dimen s io n s “A ”, “B” d o n o t in clu d e mo ld flas h o r p ro tru s io n s . Maximu m mo ld flas h o r p ro tru s io n s 0.25 mm (0.010) p er s id e. D S UFFIX S OIC (MS - 0 1 2 AB) Dimens ion, mm 8 A 14 Symbol A MIN 8.55 3.8 1.35 0.33 0.4 1.27 5.27 0° 0.1 0.19 5.8 0.25 MAX 8.75 4 1.75 0.51 1.27 H B P B C 1 G 7 C R x 45 D F G -TD 0.25 (0.010) M T C M K SEATING PLAN E H J F M J K M P R 8° 0.25 0.25 6.2 0.5 NOTES : 1. Dimen s io ns A an d B d o n o t in clud e mo ld flas h o r p rotru s ion . 2. M aximu m mo ld flas h o r p ro tru s io n 0.15 mm (0.006) p er s id e fo r A ; fo r B ‑ 0.25 mm (0.010) p er s id e. 5
KK74HCT10AN
1. 物料型号: - 型号为KK74HCT10A。

2. 器件简介: - KK74HCT10A是一款三输入与非门高性能硅门CMOS器件,与LS/ALS10引脚兼容,可用作TTL或NMOS输出与高速CMOS输入之间的电平转换器。

3. 引脚分配: - 引脚14为VCC,引脚7为GND。

4. 参数特性: - 工作电压范围:4.5至5.5V。 - 低输入电流:1.0微安。 - 最大值参数包括供电电压、输入电压、输出电压、输入电流、输出电流和供电电流等。

5. 功能详解: - 该器件包含保护电路,以防止由于高静电电压或电场造成的损坏。未使用的输入必须连接到适当的逻辑电平,未使用的输出必须保持开放。

6. 应用信息: - 适用于TTL/NMOS兼容输入电平输出,可直接与CMOS、NMOS和TTL接口。

7. 封装信息: - 提供了Plastic KK74HCT10AN和SOIC KK74HCT10AD两种封装类型,工作温度范围为-55°C至125°C。 - 提供了详细的封装尺寸信息。
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