KK75232D

TECHNICAL DATA KK75232N/D EIA-232-D INTERFACE 1 CHIP IC Description The KK75232N, KK75232D are monolithic device containing 3 independent drives and 5 receivers. These are designed to interface between date terminal equipment and date communication equipment as designed by EIA-232-D. V CC+ Bl ock D i agram 1 20 V CC • Meets standard EIA-232-D (Revision of RS-232-C) • Designed to Support Data Rate up to 120kbps • Drivers - Current Limited Output 10 mA Typical - Power-off Output Impedance 300 Ω Min - Slew Rate Control by Load Capacitor - Flexible Supply Voltage Range - Input Compatible with Most TTL and DTL Circuits • Receivers - Input Resistance 3 kΩ to 7 kΩ - Input Signal Range ± 30 V - Built-in Input Hysteresis (Double Threshold) • 20 DIP/SO20: МS-001AD (KK75232N) / МS-013AС (KK75232D) Features RA 1 RA 2 RA 3 D Y1 D Y2 RA 4 D Y3 RA 5 V CC- 2 19 RY 1 3 18 RY 2 4 17 RY 3 5 16 D A1 6 7 15 D A2 14 RY 4 D A3 RY 5 8 9 10 13 12 11 GND I 75232N, 75232D Pin Description Name VCC+ DA1 DA2 DA3 VCC RA1 RA2 RA3 RA4 RA5 Pin No 1 16 15 13 20 2 3 4 7 9 Function Driver Section Supply + Name VCCDY1 DY2 DY3 GND RY1 RY2 RY3 RY4 RY5 Pin No 10 5 6 8 11 19 18 17 14 12 Function Driver Section Supply Driver Output Ground Driver Input Receiver Section Supply Receiver Input Receiver Output 1 KK75232 Absolute Maximum Ratings Symbol VCC+ VCCVCC VI (Driver) VI (Reciver) VO (Driver) PT TSTG Top Parameter Supply Voltage Supply Voltage Supply Voltage Input Voltage Input Voltage Output Voltage Continuous Power Dissipation (Below 25 oC) Storage Temperature Operating Temperature Rating 15 -15 10 -15 ÷ +7 ± 30 -15 ÷ +15 1.0 -65 ÷ +175 0 ÷ +75 Unit V V V V V V W o C o C Schematic DRIVER VCC+ 6.2 К RESEIVER VCC 9К 2К 70 8.2 К 5К 2К DA DY 300 4К DY DA 10 К 3.6К 10К 7К VCC- 70 2 KK75232 Electrical Characteristics Supply Current Symbol ICC+ Parameter Supply Current from VCC+ Test Conditions VCC+ = 9 V VIN = 1.9V No Load VIN = 0.8V VCC+ = 12 V VIN = 1.9V No Load VIN = 0.8V VCC+ = 15 V VIN = 1.9V No Load VIN = 0.8V VCC- = -9 V VIN = 1.9V No Load VIN = 0.8V VCC- = -12 V VIN = 1.9V No Load VIN = 0.8V VCC- = -15 V VIN = 1.9V No Load VIN = 0.8V VCC = 5 V VIN = 5.0V Min Max 15 4.5 19 5.5 25 9 -15 -3.2 -19 -3.2 -25 -3.2 30 VCC = 5V, TA = 25 OC Unit mA ICC- Supply Current from VCC- mA ICC Supply Current from VCC mA Driver Section Symbol VIH VIL VOH Parameter High Level Input Voltage Low Level Input Voltage High Level Output Voltage Test Conditions VCC+ = 9 V VCC- = -9 V Min 1.9 Max Unit V V V 0.8 VIL = 0.8V RL = 3 k Ω VCC+ = 9 V VCC- = -9 V VCC+ = 13.2 V VCC- = -13.2 V VCC+ = 9 V VCC- = -9 V VCC+ = 13.2 V VCC- = -13.2 V 6 9 -6 -9 10 -1.6 -6 -12 VOL Low Level Output Voltage VIH = 1.9V RL = 3 k Ω V IIH IIL IOS(H) IOS(L) RO High Level Input Current Low Level Input Current Short Circuit Output Current at High Level Short Circuit Output Current at Low Level Output Resistance, Power Off VI = 5V VI = 0 VI = 0.8V VO = 0 VI = 1.9V VO = 0 VCC+ = 0, VCC- = 0 VO = -2V to 2V µA mA mA 6 12 mA 300 Ω 3 KK75232 Driver Switching Characteristic VCC+ = 9V, VCC- = -9V TA = 25 OC Symbol tPLH tPHL tTLH tTHL tTLH tTHL Parameter Propagation Delay Time, Low-To-High-Level Output Propagation Delay Time, High -To- Low -Level Output Transition Time, Low-To-High-Level Output * Transition Time, High -To- Low -Level Output* Transition Time, Low-To-High-Level Output** Transition Time, High-To-Low -Level Output** Test Conditions RL = 3 k Ω CL = 15 µF See Figure 1 Min Max 500 175 100 75 Unit ns ns ns ns µs µs RL = 3 k Ω t o 7 k Ω CL = 2500 ρF See Figure 1 2.5 (tip) 3.0 (tip) *- Measured between 10 % and 90 % Points of Output Waveform ** - Measured between +3V and -3V Points on the Output Waveform (EIA-232-D Condition) Receiver Section Symbol VT+ VTVOH Parameter Positive-Going Threshold Voltage Negative-Going Threshold Voltage High Level Output Voltage Low Level Output Voltage High-Level Input Current Low-Level Input Current Short-Circuit Output Current Test Conditions Min 1.75 0.75 VI= 0.75V, IOL=-0.5mA Input Open, IOL = -0.5 mA VI= 3V, IOL = 10 mA VI= 25V VI= 3V VI= -25V VI= -3V 2.6 2.6 Max 2.25 1.25 5 5 0.45 8.3 -8.3 -3 (tip) Unit V V V VOL IIH IIL IOS 3.6 0.43 -3.6 -0.43 V mA mA mA Receiver Switching Characteristic VCC= 5V Symbol tPLH tPHL tTLH tTHL Parameter Propagation Delay Time, Low-To-High-Level Output Propagation Delay Time, High -To- Low -Level Output Transition Time, Low-To-High-Level Output Transition Time, High -To- Low -Level Output Test Conditions CL = 15 ρF RL = 3.9 kΩ CL = 15 ρF RL = 390 kΩ CL = 15 ρF RL = 3.9 kΩ CL = 15 ρF RL = 390 kΩ Min Max 150 50 175 20 Unit ns ns ns ns 4 KK75232 Parameter Measurement Information DRIVER PULSE GENERATOR (See Note A) RL CL 10ns 3V 1.5V OUTPUT 1.5V OV tPLH INTPUT OUTPUT tPHL 50% Test Circuit 50% VOH VOL tTHL tTLH RESEIVER VCC 10ns Voltage Waveform 90% 90% 3V OUTPUT R1 INTPUT 10% 50% tPHL 50% tPLH 10% OV PULSE GENERATOR (See Note A) CL OUTPUT (See Note C) tTHL 1.5V 1.5V tTLH VOH VOL Test Circuit TW=25 µs, Voltage Waveform Note A. B. C. The pulse generator has the following characteristics. f = 200 KHz, ZO = 50 Ω C included probe and jig capacitance. All diodes are 1N3064 or equivalent. Fig1. Propagation and Transition Times Typical Application U AR T +5V I L A 75232N , D 75232N,D +12V / D CD / D SR D CD D SR D B 95 RX SI N RT S TX 6 1 2 / RTS 7 3 SO U T / CTS CT S 8 / D TR / RI D TR RI 4 9 5 -12V SI O C ar d 5 KK75232 N S UFFIX PLAS TIC DIP (MS - 0 0 1 AD) A Dimens ion, mm 20 11 B 1 10 Symbol A B C MIN 24.89 6.1 MAX 26.92 7.11 5.33 F L D F 0.36 1.14 2.54 7.62 0° 2.92 7.62 0.2 0.38 0.56 1.78 C -TN G D 0.25 (0.010) M T K SEATING PLAN E G H H J M J K L M N 10° 3.81 8.26 0.36 NOTES : 1. Dimen s io n s “A ”, “B” d o n o t in clu d e mo ld flas h o r p ro tru s io n s . Maximu m mo ld flas h o r p ro tru s io n s 0.25 mm (0.010) p er s id e. D S UFFIX S OIC (MS - 0 1 3 AC) A 20 11 Dimens ion, mm Symbol MIN 12.6 7.4 2.35 0.33 0.4 1.27 9.53 0° 0.1 0.23 10 0.25 8° 0.3 0.32 10.65 0.75 MAX 13 7.6 2.65 0.51 1.27 H B P A B 1 G 10 C R x 45 C D F -TD 0.25 (0.010) M T C M K SE AT IN G PL AN E J F M G H J K M P R NOTES : 1. Dimen s io ns A an d B d o n o t in clud e mo ld flas h o r p ro tru s ion . 2. M aximu m mo ld flas h o r p ro tru s io n 0.15 mm (0.006) p er s id e fo r A ; fo r B ‑ 0.25 mm (0.010) p er s id e. 6