Light Emitting Diode(AlGaInP)
KLB-0315 R
DIMENSIONS KLB-0315 R has a high bright InGaAlP red LED and has the optimized optical characteristics.
Features
• Transparent epoxy Encapsulent • High Optical Output
Applications
• Amusement • Indicator • Display
Maximum Ratings Parameter Forward current Pulse forward current Power dissipation Operating temperature Storage temperature Soldering Temperature
*2. Soldering time £ 5 Sec
*2 *1
[ Ta=25°C ]
Symbol IF IFP PD Topr. Tstg. Tsol.
Ratings 20 30 70 -30 ~ +85 -40 ~ +100 260
Unit mA mA mW °C °C °C
*1. IFP Measured under duty £ 1/10 @ 1KHz
Electro-Optical Characteristics Parameter Forward voltage Optical Output Power Doninant Wave Length Spectral half bandwidth Half angle Symbol VF Iv λd ∆λ ∆Θ Conditions IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA Min 1000 620 Typ 1.8 1500 20 40 Max 2.2 635 -
[ Ta=25°C ]
Unit V mcd nm nm deg.
1/2
Light Emitting Diode(AlGaInP)
KLB-0315 R
Forward current vs. Ambient temperature
(IF) 30
Forward current IF(mA)
Radiant Intensity vs. Forward current
1.5
25
Relative intensity
w
1
20 15 10 0 (℃) 100
u
0.5
0
0
20
40
60
80
0
5
10
15
20
25
30
(IF) 35
Ambient temperature Ta
Forward current IF
Relative radiant intensity vs. Ambient temperature
Relative radiant intensity PO
Relative intensity vs. Wavelength
1.2 1 Intensity [arb.]
10
0.8 0.6 0.4 0.2
1
0.1
-20
0
20
40
60
80
100 (℃)
0 500 550 600 650 700 750 Wave Length[nm]
Ambient temperature Ta
Forward current vs. Forward voltage
(㎃) 30
Forward current IF[mA]
Radiant Pattern
Angle(deg)
25 20 15 10
5 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward voltage VF[V] Relative intensity(%)
0
0
2/2
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