KLB-16AI-88

Infrared Emitting Diode(GaAlAs) KLB-16AI-88 The KLB-16I-88 is GaAlAs infrared emitting diode and has the optimized optical characteristics. DIMENSIONS Features • Ultra Wide Viewing Angle • 880nm wavelength • Low forward voltage Applications • Display • Indicator • Key Pad Back Light • Car CCD Camera Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2 *2. Soldering time ≤ 5 Sec *1 [ Ta=25°C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 50 0.7 75 -20 ~ +85 -30 ~ +100 260 Unit V mA A mW °C °C °C Operating temperature *1. IFP Measured under duty ≤ 1/10 @ 1KHz Electro-Optical Characteristics Parameter Forward voltage Reverse current Radiant intensity Radiant Power Peak emission wavelength Spectral bandwidth Half angle [ Ta=25°C ] Symbol VF IR Ie Po λp ∆λ ∆Θ Conditions IF = 20 mA VR=5V IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA Min 1.0 - Typ 1.30 1.5 1.3 880 45 160 Max 1.5 10 - Unit V µA mW/sr mW nm nm deg. 1/2 Infrared Emitting Diode(GaAlAs) KLB-16AI-88 Collector power dissipation Vs Ambient temperature (mW) (㎽/sr) Relative intensity (mW/sr) Radiant Intensity vs. Forward current Collector power dissipation(PD ) 25 20 15 10 5 0 10 2 10 1 10 0 0 20 40 60 80 100 (℃) 10 -1 0 10 Ambient temperature Ta 10 2 10 1 Forward current IF 10 3 (㎃) Relative radiant intensity vs. Ambient temperature 0.06 Relative radiant intensity PO 0.05 Intensity [arb.] 0.04 0.03 0.02 0.01 Relative intensity vs. Wavelength 10 1 0.1 -20 0 20 40 60 80 100 (℃) 0 750 800 850 900 950 1000 1050 Wave Length[nm] Ambient temperature Ta Forward current vs. Forward voltage (㎃) 90 80 70 60 50 40 30 20 10 5 0 (V) 0 0.5 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Forward voltage VF Radiant Pattern Angle(deg) Forward current IF + + 60 40 +2 0 0 -20 -4 0 -6 0 50 -80 -100 + 80 +1 00 0 100 50 50 100 Relative intensity(%) 2/2