KLB-16AR

Light Emitting Diode(InGaAlP) KLB-16AR KLB-16AR has a high bright InGaAlP Red LED and has the optimized optical characteristics. DIMENSIONS Features • Ultra Wide Viewing Angle • Very Thin Small SMD Package Applications • Display • Indicator • Key Pad Back Light Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2. Soldering time ≤ 5 Sec *2 *1 [ Ta=25°C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 25 60 70 -30 ~ +85 -40 ~ +105 260 Unit V mA mA mW °C °C °C Operating temperature *1. IFP Measured under duty ≤ 1/10 @ 1KHz Electro-Optical Characteristics Parameter Forward voltage Luminous Intensity Doninant Wave Length Spectral half bandwidth Half angle [ Ta=25°C ] Symbol VF Iv λd ∆λ ∆Θ Conditions IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA Min 15 620 - Typ 2.0 25 20 160 Max 2.2 630 - Unit V mcd nm nm deg. 1/2 Light Emitting Diode(InGaAlP) KLB-16AR Forward current vs. Ambient temperature (IF) 30 Radiant Intensity vs. Forward current 1.5 Forward current IF(mA) 25 Relative intensity (℃) 100 20 15 10 5 0 1 0.5 0 20 40 60 80 0 0 5 10 15 20 25 30 (IF) 35 Ambient temperature Ta Forward current IF Relative radiant intensity vs. Ambient temperature 1.2 Relative radiant intensity PO 1 Intensity [arb.] 10 Relative intensity vs. Wavelength 0.8 0.6 0.4 0.2 1 0.1 -20 0 20 40 60 80 100 (℃) 0 500 550 600 650 700 750 800 Ambient temperature Ta Wave Length[nm] Forward current vs. Forward voltage (㎃) 30 Radiant Pattern Angle(deg) Forward current IF +6 0 25 20 15 10 + 40 + 20 0 -20 -4 0 -6 0 50 -80 -100 +100 5 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 +80 0 100 50 50 0 0 100 Forward voltage VF Relative intensity(%) 2/2