KLB-16B

Light Emitting Diode(InGaN) KLB-16B DIMENSIONS KLB-16B is a high bright InGaN blue LED, and has the optimized optical characteristics. Features • Ultra Wide Viewing Angle • Very Thin Small SMD Package Applications • Display • Indicator • Key Pad Back Light Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Operating temperature Storage temperature Soldering Temperature *2. Soldering time ≤ 5 Sec *2 *1 [ Ta=25°C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 20 70 70 -20 ~ +85 -30 ~ +100 260 Unit V mA mA mW °C °C °C *1. IFP Measured under duty ≤ 1/10 @ 1KHz Electro-Optical Characteristics Parameter Forward voltage Luminous Intensity Doninant Wave Length Spectral half bandwidth Half angle [ Ta=25°C ] Symbol VF Iv λd ∆λ ∆Θ Conditions IF = 5 mA IF = 10 mA IF = 5 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA Min 20 35 465 - Typ 2.9 3.0 35 60 25 160 Max 3.4 3.6 478 - Unit V mcd nm nm deg. 1/2 Light Emitting Diode(InGaN) KLB-16B Forward current vs. Ambient temperature (IF) 25 Radiant Intensity vs. Forward current 1.5 Forward current IF(mA) 20 Relative intensity 1 15 10 5 0 (℃) 100 0.5 0 0 20 40 60 80 0 3 5 10 15 20 25 (IF) 30 Ambient temperature Ta Forward current IF Relative radiant intensity vs. Ambient temperature 0.06 Relative radiant intensity PO 0.05 Intensity [arb.] 10 Relative intensity vs. Wavelength 0.04 0.03 0.02 0.01 1 0.1 -20 0 20 40 60 80 100 (℃) 0 350 400 450 500 550 600 Ambient temperature Ta Wave Length[nm] Forward current vs. Forward voltage ㎃) 30 Forward current IF Radiant Pattern Angle(deg) Y +4 +6 0 25 20 15 10 0 +20 0 X -20 -4 0 Y X -6 50 0 -80 -100 5 + 80 +1 0 0 0 100 0 0 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 50 50 100 Relative intensity(%) 2/2