White Light Emitting Diode(InGaN)
KLB-16WC
DIMENSIONS KLB-16W is a high bright InGaN white LED whitout using phorsphor.
Features
• Ultra Wide Viewing Angle • Very Thin Small SMD Package • Single Chip White LED without Phospor
Applications
• Display • Indicator • Key Pad Back Light
Anode Index
Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature
*2. Soldering time ≤ 5 Sec
*2 *1
[ Ta=25°C ]
Symbol VR IF IFP PD Topr. Tstg. Tsol.
Ratings 5 25 60 65 -30 ~ +85 -40 ~ +105 260
Unit V mA mA mW °C °C °C
Operating temperature
*1. IFP Measured under duty ≤ 1/10 @ 1KHz
Electro-Optical Characteristics Parameter Forward voltage Luminous Intensity Symbol Conditions VF Iv x y x y ∆Θ IF = 5 mA IF = 20 mA IF = 5 mA IF = 20 mA IF = 5 mA IF = 20 mA IF = 20 mA KLB-16W 2.9 3.3 70 230 0.33 0.35 0.28 0.33 160 KLB-16W 2.9 3.3 75 240 0.35 0.38 0.29 0.34 160 Typical Values KLB-16W KLB-16W 2.9 2.9 3.3 70 230 0.36 0.36 0.29 0.32 160 3.3 70 230 0.41 0.39 0.31 0.35 160 KLB-16W 2.9 3.3 90 280 0.42 0.42 0.32 0.37 160
[ Ta=25°C ]
Unit V V mcd
Color Coordinate Half angle
deg.
1/2
White Light Emitting Diode(InGaN)
KLB-16WC
Forward current vs. Ambient temperature
(IF) 30 25
Radiant Intensity vs. Forward current
1.5
Forward current IF(mA)
Relative intensity
20 15 10 5 0 (℃) 100
1
0.5
0
0
20
40
60
80
0
5
Ambient temperature Ta
10 15 20 25 Forward current IF
30
(IF) 35
Relative radiant intensity vs. Ambient temperature
1.2 Relative radiant intensity PO 1 Intensity [arb.]
10
Relative intensity vs. Wavelength
20mA
0.8 0.6 5mA 0.4 0.2 0 350
1
0.1
-20
0
20
40
60
80
100 (℃)
450
550
650
750
850
Ambient temperature Ta
Wave Length[nm]
Forward current vs. Forward voltage
(㎃) 30
Radiant Pattern
Angle(deg)
Forward current IF
+ 60
25 20 15 10
+
40
+ 20
0
-20
-4
0
-6 0
50
-80 -100
+1 0 0
5 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF
+80
0
100
50
50
0
0
100
Relative intensity(%)
2/2
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