KLC-50B

Light Emitting Diode(InGaN) KLC-50 B DIMENSIONS KLC-50 B is a high bright InGaN blue LED, and has the optimized optical characteristics. Unit : [mm] Features • Transparent epoxy lens • High Optical Output 1 2 Applications • Display • Indicator • Signage 2 1 Maximum Ratings Parameter Reverse voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2. Soldering time £ 5 Sec *2 *1 [ Ta=25°C ] Symbol VR IF IFP PD Topr. Tstg. Tsol. Ratings 5 30 0.5 105 -30 ~ +85 -40 ~ +100 260 Unit V mA A mW °C °C °C Operating temperature *1. IFP Measured under duty £ 1/10 @ 1KHz Keep the distance more than 3mm from soldering foundation. Electro-Optical Characteristics Parameter Forward voltage Reverse current Luminous Intensity Doninant Wave Length Spectral half bandwidth Half angle [ Ta=25°C ] Symbol VF IR Iv λd ∆λ 2∆Θ1/2 Conditions IF = 20 mA VR = 5 V IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA Min 90 465 - Typ 3.2 120 470 25 180 Max 3.5 10 150 475 - Unit V uA mcd nm nm deg. 1/2 Light Emitting Diode(InGaN) KLC-50 B Forward current vs. Ambient temperature 50 Forward current IF[mA] Radiant Intensity vs. Forward current 1.5 40 Relative intensity 30 20 10 0 1 0.5 0 20 40 60 80 100 0 0 5 10 15 20 25 30 (IF) 35 Ambient temperature Ta [℃] Forward current IF[mA] Relative radiant intensity vs. Ambient temperature Relative radiant intensity PO Relative intensity vs. Wavelength 1.2 10 Intensity [arb.] 1 0.8 0.6 0.4 0.2 1 0.1 -20 0 20 40 60 80 100 0 350 400 450 500 550 600 Wave Length[nm] Ambient temperature Ta [℃] Forward current vs. Forward voltage 40 35 30 25 20 15 10 5 0 0 Radiant Pattern Angle(deg) Forward current IF[mA] + +6 0 40 +20 0 -20 -4 0 -6 0 50 -80 -100 + 80 +1 00 0 100 50 50 1.0 2.0 2.5 3.0 3.5 4.0 Forward voltage VF[V] 100 Relative intensity(%) 2/2