KLP-32PG

Light Emitting Diode(InGaN) KLP-32PG-X-X DIMENSIONS KLP-32G-x-x is a high bright InGaN green LED, and has the optimized optical characteristics. Features • Transparent epoxy Encapsulent • High Optical Output Zener(Option) Applications • Display • Indicator • Signage Maximum Ratings Parameter Reverse Voltage (w/o Zener Option) Reverse current ( w Zener Option) Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2. Soldering time £ 5 Sec *2 *1 [ Ta=25°C ] Symbol VR IR IF IFP PD Topr. Tstg. Tsol. Ratings 5 50 30 0.1 90 -30 ~ +85 -40 ~ +105 260 Unit V mA mA A mW °C °C °C Operating temperature *1. IFP Measured under duty £ 1/10 @ 1KHz Electro-Optical Characteristics Parameter Forward voltage Optical Output Power Peak emission wavelength Doninant Wave Length Spectral half bandwidth Half angle [ Ta=25°C ] Symbol VF Po Iv λP λd ∆λ ∆Θ Conditions IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA 1/2 Min 6.00 900 515 - Typ 3.2 6.80 1100 520 30 110 Max 535 - Unit V mW mcd nm nm nm deg. Light Emitting Diode(InGaN) KLP-32PG-X-X Forward current vs. Ambient temperature (IF) 30 F o Radiant Intensity vs. Forward current 1.5 Forward current IF(mA) r w a r d C u r r e n t 25 Relative intensity 20 15 10 0 (℃) 100 1 0.5 0 20 A m bient 40 Tem perature 60 Ta 80 0 0 5 Ambient temperature Ta 10 15 20 25 Forward current IF 30 (IF) 35 Relative radiant intensity vs. Ambient temperature 1.2 Relative radiant intensity PO 1 10 Relative intensity vs. Wavelength Intensity [arb.] 0.8 0.6 0.4 0.2 0 400 1 0.1 -20 0 20 40 60 80 100 (℃) 450 500 550 600 650 Ambient temperature Ta Wave Length[nm] Forward current vs. Forward voltage (㎃) 30 Radiant Pattern Angle(deg) Forward current IF + 60 25 20 15 10 + 40 +20 0 -20 -4 0 -6 0 50 -80 -100 5 +80 + 10 0 0 100 0 0 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 50 50 100 Relative intensity(%) 2/2