Light Emitting Diode(InGaAlP/InGaN)
KLP-36M-X-X
DIMENSIONS KLP-34M is a 3 in 1 full colour LED.
3 2 1
1
Features
• Transparent epoxy Encapsulent • High Optical Output
4 5 6 B 3 GR 21
A
4
5
6
Applications
• Display • Indicator • Signage
Maximum Ratings Parameter Forward Current
[ Ta=25°C ]
Symbol R G IF B R
*1
MIN -30 -40
MAX 30 30 30 80 100 100 75 105 105 85 105 260
Unit mA mA mA mA mA mA mW mW mW °C °C °C
Conditions
Peak Forward Current
IFP
G B R G B TOP Ts Tsol
Power Dissipation Operating Temperature Storage Temperature Soldering Temperature*2
*1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec
PD
5 Sec
Electro-Optical Characteristics Parameter Forward voltage Optical Output Power Peak emission wavelength Doninant Wave Length Spectral half bandwidth Half angle Symbol VF Po Iv λP λd ∆λ ∆Θ Conditions IF = 20 mA/Die IF = 20 mA/Die IF = 20 mA/Die IF = 20 mA/Die IF = 20 mA/Die IF = 20 mA/Die RED 2 5.50 350 620 625 20 Typical Value GREEN 3.3 4.50 750 520 525 30 160 BLUE 3.2 8.5 200 468 470 25 -
[ Ta=25°C ]
Unit V mW mcd nm nm nm deg.
1/2
Light Emitting Diode(InGaAlP/InGaN)
KLP-36M-X-X
Forward current vs. Ambient temperature
Forward current IF(mA), Each Chip
(IF) 50
Radiant Intensity vs. Forward current
1.5
Relative intensity
(℃) 100
40 30 20 10 0
1
0.5
0
20
40
60
80
0
Ambient temperature Ta
0
5
10 15 20 25 Forward current IF
30
(IF) 35
Relative radiant intensity vs. Ambient temperature
Relative intensity vs. Wavelength
1.2 B G
Relative radiant intensity PO
R
10
Intensity [arb.]
1 0.8 0.6 0.4 0.2 0 400 450 500 550 600 650 700
1
0.1
-20
0
20
40
60
80
100 (℃)
Wave Length[nm]
Ambient temperature Ta
Forward current vs. Forward voltage
(㎃) 30 25 20 15 10
R G/B
Radiant Pattern
Angle(deg)
0 +4
+60
+20
0
-20
-4 0
0 -6
Forward current IF
50
-80 -100
+80
+100
5 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward voltage VF
0
100
50
50
0
100
0
Relative intensity(%)
2/2
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