KRT-11XS34N

Optical Monitoring Photodiode TO CAN for KRT-11XSx4N KRT-11XSx4N Description KRT-11XSx4N is InGaAs PIN Photodiode TO CAN package with BIG size PD active diameter(Ø1.0 , Ø2.0 , Ø3.0mm) It is recommended for Laser diode life test and optical power monitoring. KRT -11XSx4N series operate at both 0.9um and 1.6um wavelength range . Features ● 3(2) pin TO CAN package with hermetically sealed PIN PD ● Wide operating temperature range from –40 ℃ to 85℃ ● High performance and high reliability InGaAs PIN PD ● Wide operating wavelength range from 0.9um to 1.6um Applications Laser diode power monitoring ● Laser diode life test ● ● ● KRT-11XS14N KRT-11XS24N KRT-11XS34N Counterfeiting money Sensing Sensor. Optical switch Absolute Maximum Ratings Parameter Symbol Ratings Unit VR max. Reverse Voltage 10 V Topr Operating Temperature -40 ~ +85 ℃ Tstg. Storage Temperature -40 ~ +100 ℃ Tsol. Soldering Temperature *1 270 ℃ *1 : Soldering Time ≤ 10 seconds (At a distance of 1 mm from the package). Electro-Optical Characteristics KRT-11XS14N KRT-11XS24N KRT-11XS34N Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Active area Ø 1.0 2.0 3.0 ㎜ ID Dark Current nA 1.0 5.0 2.0 10.0 10.0 50.0 1.31um 0.85 0.85 0.85 S mA/mW Responsivity 0.90 1.55um 0.90 0.90 fC 3dB Cut off frequency 4 MHz 18 35 8 4 2 CT Terminal Capacitance pF 90 150 250 500 550 1000 * These specifications are subject to change without notice. Parameter Symbol Unit Condition @ VR=5V, 25℃ @ VR=5V, 25℃ @VR=5V, RL=50Ω @ VR=5V, f=1MHz Ordering information KRT Device Type 1 : PIN-PD 2 : PIN-TIA Data Rate 1 : Monitoring 2 : 155 Mbps 4 : 2.5 Gbps 5 : 5Gbps Oper. Voltage 1 : 3.3 V Active Area 1 : Ø50 um Cap Type 1 : long ball lens cap Pin Config. 3(2) 4 5 C P D I T A B J K M KODENSHI Receiver TO CAN 6 : Analog PIN PD 3 : 1.25 Gbps 2:5V 2 : Ø75 um 2 : short ball lens cap 3 : 3.3/5 V 3 : 250 um sq. 3 : long flat window cap x : NA S1 : Ø1.0 mm 4 : short flat window cap S2 : Ø2.0 mm S3 : Ø3.0 mm C1 W H The engineering spec can be revised without any previous notice. When customer's applying, please request us a revised specification before submitting the specification to the customers. 1/3 Rev.001 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea Optical Monitoring Photodiode TO CAN for KRT-11XSx4N KRT-11XSx4N ■ Spectral response range ■ Dark Current vs Reverse Voltage (Typ. Ta=25℃) 100 10 D a rk C u rre n t (u A ) 1 0.1 0.01 1E-3 1E-4 0 KIP-M1M KIP-M2M KIP-M3M 20 40 60 Reverse Bias Voltage (V) ■ -3dB Cutoff Frequency (Typ. Ta=25℃) ■ Dark Current vs Operating Temperature (Typ. Ta=25℃) -20 KIP-M1M KIP-M2M KIP-M3M 1000 D ark Current (nA) 100 -30 G ain (dB ) 10 -40 1 KIP-M1M KIP-M2M KIP-M3M -50 1 10 100 0.1 0 20 40 60 80 100 Frequency (MHz) Temperature (℃) The engineering spec can be revised without any previous notice. When customer's applying, please request us a revised specification before submitting the specification to the customers. 2/3 Rev.001 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea Optical Monitoring Photodiode TO CAN for KRT-11XSx4N KRT-11XSx4N ■ TO CAN package out dimension & Pin connections UNIT:mm Cathode Anode KRT-11XS14N(KRT-11XS24N) UNIT:mm Cathode Anode UNIT:mm Cathode NC Anode KRT-11XS34N The engineering spec can be revised without any previous notice. When customer's applying, please request us a revised specification before submitting the specification to the customers. 3/3 Rev.001 For more information on other parts available, please visit our website: www.kodenshi.co.kr KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea