SDB10200DI

SDB10200DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier  Halogen-free device and RoHS compliant device Pin Configuration Pin 1, 3: Anode Pin 2, 4: Cathode Applications  Power supply - Output rectification  Converter  Free-wheeling diode  Reverse battery protection  Power inverters TO-252 TO-252 Product Characteristics IF(AV) VRRM VFM at 125℃ IFSM 2 X 5A 200V 0.72V (Typ.) 120A Description The SDB10200DI has two schottky barriers arranged in a common cathode configuration. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Ordering Information Device SDB10200DI Marking Code SDB10200DI Package TO-252 Packaging Tape & Reel Marking Information SDB10200DI = Specific Device Code SDB10200DI YWW YWW = Year & Week Code Marking -. Y = Year Code -. WW = Week Code KSD-D6O018-001 1 SDB10200DI Absolute Maximum Ratings (Limiting Values) Characteristic Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage per diode Maximum average forward rectified current total device Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Storage temperature range Maximum operating junction temperature IFSM Tstg Tj IF(AV) 10 120 -45℃ to +150℃ 150 A ℃ ℃ Symbol VRRM VRWM VR Value Unit 200 V 5 A Thermal Characteristics Characteristic per diode Maximum thermal resistance junction to case total device Rth(j-c) 5.6 Symbol Value 6.0 Unit ℃/W Electrical Characteristics (Per Diode) Characteristic Peak forward voltage drop Symbol VFM (1) Test Condition Tj=25℃ IFM = 5A Tj=125℃ Tj=25℃ VR = VRRM Tj=125℃ Min. Typ. 0.85 0.72 150 Max. 0.95 0.76 10 10 Unit V V uA mA pF Reverse leakage current Junction capacitance IRM (1) Cj VR = 1VDC, f=1MHz Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% To evaluate the conduction losses use the following equation: PF = 0.68 IF(AV) + 0.032 IF2(RMS) IFM Forward Voltage : VFM = Vto + rd IFM 2 IF(AV) rd Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS) IF(AV) VFM Vto KSD-D6O018-001 2 SDB10200DI Rating and Characteristic Curves Fig. 1) Typical Forward Characteristics (Per diode) Fig. 2) Typical Reverse Characteristics (Per diode) Fig. 3) Maximum Forward Derative Curve ㎂ Fig. 4) Forward Power Dissipation (Per diode) Fig. 5) Maximum Non-Repetitive Peak Forward Surge Current (Per diode) Fig. 6) Typical Junction Capacitance (Per diode) KSD-D6O018-001 3 SDB10200DI Package Outline Dimension ※ Recommended Land Pattern [unit: mm] 7.00 1.50 4.60 2.50 7.00 KSD-D6O018-001 4 SDB10200DI The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-D6O018-001 5