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SDB10200PI

SDB10200PI

  • 厂商:

    KODENSHI(可天士)

  • 封装:

  • 描述:

    SDB10200PI - DUAL COMMON CATHODE SCHOTTKY RECTIFIER - KODENSHI KOREA CORP.

  • 数据手册
  • 价格&库存
SDB10200PI 数据手册
SDB10200PI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier  Full lead (Pb)-free and RoHS compliant device 123 1 2 3 Pin 1, 3 : Anode Pin 2 : Cathode Applications  Power supply - Output rectification  Converter  Free-wheeling diode  Reverse battery protection  Power inverters TO-220F-3L Product Characteristics IF(AV) VRRM VFM at 125℃ IFSM 2 X 5A 200V 0.72V (Typ.) 120A Description The SDB10200PI has two schottky barriers arranged in a common cathode configuration. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Ordering Information Device SDB10200PI Marking Code SDB10200PI Package TO-220F-3L Packaging Tube Marking Information AUK = Manufacture Logo ∆ = Control Code of Manufacture YMDD = Date Code Marking -. Y = Year Code -. M = Monthly Code -. D = Daily Code SDB10200PI = Specific Device Code KSD-D0O013-002 1 SDB10200PI Absolute Maximum Ratings (Limiting Values) Characteristic Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current per diode total device Symbol VRRM VRWM VR IF(AV) Value 200 5 10 120 -45℃ to +150℃ 150 Unit V A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Storage temperature range Maximum operating junction temperature IFSM Tstg Tj A ℃ ℃ Thermal Characteristics Characteristic Maximum thermal resistance junction to case per diode total device Symbol Rth(j-c) Value 4.0 3.6 Unit ℃/W Electrical Characteristics (Per Diode) Characteristic Peak forward voltage drop Symbol VFM (1) Test Condition IFM = 5A Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ Min. Typ. 0.85 0.72 150 Max. 0.95 0.76 10 10 Unit V V uA mA pF Reverse leakage current Junction capacitance IRM (1) Cj VR = VRRM VR = 1VDC, f=1MHz Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% To evaluate the conduction losses use the following equation: PF = 0.68 IF(AV) + 0.032 IF2(RMS) IFM Forward Voltage : VFM = Vto + rd IFM 2 IF(AV) rd Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS) IF(AV) VFM Vto KSD-D0O013-002 2 SDB10200PI Rating and Characteristic Curves Fig. 1) Typical Forward Characteristics (Per diode) Fig. 2) Typical Reverse Characteristics (Per diode) Fig. 3) Maximum Forward Derative Curve ㎂ Fig. 4) Forward Power Dissipation (Per diode) Fig. 5) Maximum Non-Repetitive Peak Forward Surge Current (Per diode) Fig. 6) Typical Junction Capacitance (Per diode) KSD-D0O013-002 3 SDB10200PI Package Outline Dimension KSD-D0O013-002 4 SDB10200PI The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-D0O013-002 5
SDB10200PI 价格&库存

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