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SDB1060DI

SDB1060DI

  • 厂商:

    KODENSHI(可天士)

  • 封装:

  • 描述:

    SDB1060DI - DUAL COMMON CATHODE SCHOTTKY RECTIFIER - KODENSHI KOREA CORP.

  • 数据手册
  • 价格&库存
SDB1060DI 数据手册
SDB1060DI Schottky Barrier Rectifier DUAL COMMON CATHODE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  High surge capability  Dual common cathode rectifier  “Green” device and RoHS compliant device Pin Configuration Pin 1, 3: Anode Pin 2, 4: Cathode Applications  Power supply - Output rectification  Converter  Free-wheeling diode  Reverse battery protection  Power inverters TO-252 TO-252 Product Characteristics IF(AV) VRRM VFM at 125℃ IFSM 2 X 5A 60V 0.55V 60A Description The SDB1060DI has two schottky barriers arranged in a common cathode configuration. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Ordering Information Device SDB1060DI Marking Code SDB1060DI Package TO-252 Packaging Tape & Reel Marking Information SDB1060DI = Specific Device Code SDB1060DI YWW YWW = Year & Week Code Marking -. Y = Year Code -. WW = Week Code KSD-D6O008-003 1 SDB1060DI Absolute Maximum Ratings (Limiting Values) Characteristic Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage per diode Maximum average forward rectified current total device Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Storage temperature range Maximum operating junction temperature IF(AV) Symbol VRRM VRWM VR Value 60 5 A 10 60 -45℃ to +150℃ 150 A ℃ ℃ Unit V IFSM Tstg Tj Thermal Characteristics Characteristic per diode Maximum thermal resistance junction to case total device Rth(j-c) Symbol Value 6.0 5.6 Unit ℃/W Electrical Characteristics (Per Diode) Characteristic Symbol Test Condition IFM = 3A Peak forward voltage drop VFM (1) IFM = 5A Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ Min. Typ. 180 Max. 0.55 0.50 0.65 0.55 0.5 50 Unit V V V V mA mA pF Reverse leakage current Junction capacitance IRM (1) Cj VR = VRRM VR = 5VDC, f=1MHz Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% To evaluate the conduction losses use the following equation: PF = 0.36 IF(AV) + 0.043 IF2(RMS) IFM Forward Voltage : VFM = Vto + rd IFM 2 IF(AV) rd Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS) IF(AV) VFM Vto KSD-D6O008-003 2 SDB1060DI Rating and Characteristic Curves Fig. 1) Typical Forward Characteristics (Per diode) Fig. 2) Typical Reverse Characteristics (Per diode) Fig. 3) Maximum Forward Derative Curve Fig. 4) Forward Power Dissipation (Per diode) Fig. 5) Maximum Non-Repetitive Peak Forward Surge Current (Per diode) Fig. 6) Typical Junction Capacitance (Per diode) KSD-D6O008-003 3 SDB1060DI Package Outline Dimension ※ Recommended Land Pattern [unit: mm] 7.00 1.50 4.60 2.50 7.00 KSD-D6O008-003 4 SDB1060DI The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-D6O008-003 5
SDB1060DI 价格&库存

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