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SDB2045P

SDB2045P

  • 厂商:

    KODENSHI(可天士)

  • 封装:

  • 描述:

    SDB2045P - LOW VOLTAGE SCHOTTKY RECTIFIER - KODENSHI KOREA CORP.

  • 数据手册
  • 价格&库存
SDB2045P 数据手册
SDB2045P Schottky Barrier Rectifier LOW VOLTAGE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  Guard-ring for overvoltage protection  Dual common cathode rectifier  Full lead (Pb)-free and RoHS compliant device 123 1 2 3 Pin 1, 3 : Anode Pin 2 : Cathode Applications  Power supply - Output rectification  High efficiency SMPS  Free-wheeling diode  Reverse battery protection  DC to DC systems IF(AV) VRRM VFM at 125℃ IFSM TO-220AB-3L Product Characteristics 2 X 10A 45V 0.50V 120A Description Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptors and on board DC to DC converters. Ordering Information Device SDB2045P Marking Code SDB2045P Package TO-220AB-3L Packaging Tube Marking Information AUK = Manufacture Logo Δ = Control Code of Manufacture YMDD = Date Code Marking AUK △YMDD SDB2045P -. Y = Year Code -. M = Monthly Code -. DD = Daily Code SDB2045P = Specific Device Code KSD-D0P024-000 1 SDB2045P Absolute Maximum Ratings (Limiting Values) Characteristic Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage per diode Maximum average forward rectified current total device Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Storage temperature range Maximum operating junction temperature IFSM Tstg TJ IF(AV) 20 120 -45 to +150 ℃ 150 A Symbol VRRM VRWM VR Value Unit 45 V 10 A Thermal Characteristics Characteristic per diode Maximum thermal resistance junction to case total device Rth(j-c) 2.8 Symbol Value 3.0 Unit ℃/W Electrical Characteristics (Per Diode) Characteristic Peak forward voltage drop Symbol VFM (1) Test Condition Tj=25℃ IFM = 10A Tj=125℃ Tj=25℃ VR = VRRM Tj=125℃ Min. Typ. 550 Max. 0.54 V 0.50 1.5 mA 150 pF Unit Reverse leakage current Junction capacitance IRM (1) Cj VR = 5VDC, f=1MHz Note : (1) Pulse test : tP≤380us, Duty cycle≤2% To evaluate the conduction losses use the following equation (Fig 4.) : PF = 0.35 x IF(AV) + 0.015 IF2(RMS) IFM Forward Voltage : VFM = Vto + rd IFM 2 IF(AV) rd Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS) IF(AV) Vto VFM KSD-D0P024-000 2 SDB2045P Rating and Characteristic Curves Fig. 1) Typical Forward Characteristics (Per diode) Fig. 2) Typical Reverse Characteristics (Per diode) Fig. 3) Maximum Forward Derative Curve Fig. 5) Maximum Non-Repetitive Peak Forward Surge Current (Per diode) KSD-D0P024-000 ㎃ Fig. 4) Forward Power Dissipation (Per diode) Fig. 6) Typical Junction Capacitance (Per diode) 3 SDB2045P Package Outline Dimension KSD-D0P024-000 4 SDB2045P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-D0P024-000 5
SDB2045P 价格&库存

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