SDB20D80D2

SDB20D80D2 Schottky Barrier Rectifier HIGH VOLTAGE SCHOTTKY RECTIFIER Features  Low forward voltage drop and leakage current  Low power loss and High efficiency  Guard-ring for overvoltage protection  Dual common cathode rectifier  Full lead (Pb)-free and RoHS compliant device 123 1 2, 4 3 4 Pin 1, 3: Anode Pin 2, 4: Cathode Applications  Power supply - Output rectification  High efficiency SMPS  Free-wheeling diode  Reverse battery protection  DC to DC systems D2-PAK Product Characteristics IF(AV) VRRM VFM at 125℃ IFSM 2 X 10A 80V 0.65V (Typ.) 150A Description The SDB20D80D2 has two schottky barriers arranged in a common cathode configuration. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. Ordering Information Device SDB20D80D2 Marking Code SDB20D80D2 Package D2-PAK Packaging Tape & Reel Marking Information AUK = Manufacture Logo ∆ = Control Code of Manufacture AUK AUK YMDD = Date Code Marking -. Y = Year Code -. M = Monthly Code -. DD = Daily Code SDB20D80D2 = Specific Device Code ΔYMDD SDB20D80D2 KSD-D6S007-001 1 SDB20D80D2 Absolute Maximum Ratings (Limiting Values, Per diode) Characteristic Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage per diode Maximum average forward rectified current total device Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Storage temperature range Maximum operating junction temperature IFSM Tstg Tj IF(AV) 20 150 -45℃ to +150℃ 150 A ℃ ℃ Symbol VRRM VRWM VR Value Unit 80 V 10 A Thermal Characteristics Characteristic per diode Maximum thermal resistance junction to case total device Rth(j-c) 2.8 Symbol Value 3.0 Unit ℃/W Electrical Characteristics (Per Diode) Characteristic Peak forward voltage drop Symbol VFM (1) Test Condition Tj=25℃ IFM = 10A Tj=125℃ Tj=25℃ VR = VRRM Tj=125℃ Min. Typ. 0.70 0.65 550 Max. 0.80 0.72 0.6 100 Unit V V mA mA pF Reverse leakage current Junction capacitance IRM (1) Cj VR = 1VDC, f=1MHz Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% To evaluate the conduction losses use the following equation: PF = 0.36 x IF(AV) + 0.0335 IF2(RMS) IFM Forward Voltage : VFM = Vto + rd IFM 2 IF(AV) rd Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS) IF(AV) Vto VFM KSD-D6S007-001 2 SDB20D80D2 Rating and Characteristic Curves Fig. 1) Typical Forward Characteristics (Per diode) Fig. 2) Typical Reverse Characteristics (Per diode) Fig. 3) Maximum Forward Derative Curve ㎃ Fig. 4) Forward Power Dissipation (Per diode) Fig. 5) Maximum Non-Repetitive Peak Forward Surge Current (Per diode) Fig. 6) Typical Junction Capacitance (Per diode) KSD-D6S007-001 3 SDB20D80D2 Package Outline Dimension ※ Recommend PCB solder land [Unit: mm] KSD-D6S007-001 4 SDB20D80D2 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-D6S007-001 5