SMK0160

SMK0160 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage : BVDSS=600V(Min.) Low Crss : Crss=3.4pF(Typ.) Low gate charge : Qg=3.9nC(Typ.) Low RDS(on) : RDS(on)=11.5Ω(Max.) G Package Code TO-92 G DS S TO-92 PIN Connection D Ordering Information Type No. SMK0160 Marking SMK0160 Marking Diagram SMK 0160 YWW Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, Week) Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg Rating 600 ±30 0.3 0.18 1.2 625 0.3 53 0.3 1.1 150 -55~150 Unit V V A A A mW A mJ A mJ °C Characteristic Thermal resistance Junction-ambient Symbol Rth(J-A) ** Typ. - Max. 200 Unit °C/W ** Limited by maximum junction temperature KSD-T0A014-001 1 SMK0160 Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250uA, VGS=0 ID=250uA, VDS=VGS VDS=600V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=150mA VDS=10V, ID=150mA VGS=0V, VDS=25V, f=1MHz Min. Typ. Max. 600 2.0 9.3 0.32 131 19.4 3.4 5.5 5 13 28 3.9 1.7 0.85 4.0 1 ±100 11.5 164 24.3 4.3 4.9 - Unit V V uA nA Ω S pF VDD=300V, ID=0.3A RG=25Ω - ③④ - ns VDS=480V, VGS=10V ID=0.3A nC ③④ - Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted) Characteristic Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④ Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=0.3A IS=0.3A, VGS=0V dIF/dt=100A/us Min. - Typ. Max. Unit 190 0.53 0.3 1.2 1.4 A V ns uC Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=1080mH, IAS=0.3A, VDD=50V, RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature KSD-T0A014-001 2 SMK0160 Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS - Fig. 3 RDS(on) - ID ℃ Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ KSD-T0A014-001 3 SMK0160 Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ ㅋ C C Fig. 9 ID - Ta ` Fig. 10 Safe Operating Area * KSD-T0A014-001 4 Fig. 11 Gate Charge Test Circuit & Waveform SMK0160 Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0A014-001 5 SMK0160 Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0A014-001 6 SMK0160 Outline Dimension unit: mm KSD-T0A014-001 7 SMK0160 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0A014-001 8