SMK0170I

SMK0170I Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage : BVDSS=700V(Min.) Low Crss : Crss=2.6pF(Typ.) Low gate charge : Qg=4.1nC(Typ.) Low RDS(ON) : RDS(ON)=15Ω(Max.) PIN Connection D Ordering Information Type No. SMK0170I Marking SMK0170 Package Code I-PAK G GD S S I-PAK Marking Diagram Column 1 : Device Code SMK0170 SMK0170 YWW Column 2 : Production Information e.g.) YWW -. Y : Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Total Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Symbol VDSS VGSS ID (TC=25℃) (TC=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 700 30 1.0 0.63 4.0 28 1.0 17 1.0 0.5 150 -55~150 Unit V V A A W A mJ A mJ C Characteristic Thermal resistance* Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 4.46 62.5 Unit ℃/W KSD-T6Q007-000 1 SMK0170I Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS=VGS VDS=700V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=0.5A VDS=10V, ID=0.5A VGS=0V, VDS=25V, Min. 700 2.0 ③④ ③④ - Typ. 12.5 0.5 124 17.7 2.6 7 21 13 27 4.1 1.8 0.9 Max. 4.0 1 100 15.0 155 22.1 3.3 5.1 - Unit V V A nA  S pF f=1MHz VDD=300V, ID=1.0A RG=25Ω ns VDD=560V, VGS=10V ID=1.0A nC Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Source current Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④ Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=1.0A IS=1.0A, VGS=0V dIS/dt=100A/us Min. - Typ. 190 0.53 Max. 1.0 4.0 1.4 - Unit A V ns uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=50mH, IAS=0.8A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width＜300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T6Q007-000 2 SMK0170I Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS ℃ T - Fig. 3 RDS(on) - ID ℃ Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ KSD-T6Q007-000 3 SMK0170I Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ C C Fig. 9 ID - Ta Fig. 10 Safe Operating Area ` * KSD-T6Q007-000 4 Fig. 11 Gate Charge Test Circuit & Waveform SMK0170I Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T6Q007-000 5 SMK0170I Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T6Q007-000 6 SMK0170I Outline Dimension unit : mm KSD-T6Q007-000 7 SMK0170I The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T6Q007-000 8