SMK0460I

SMK0460I Advanced Power N-Ch MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.8pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) Type No. SMK0460I Marking SMK0460 Package Code I-PAK GD S S I-PAK PIN Connection D G Ordering Information Marking Diagram SMK0460I SMK0460I YWW Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 4 2.53 16 48 4 225 4 10 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 2.6 62.5 Unit ℃/W KSD-T6Q006-001 1 SMK0460I Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250μA, VGS=0 ID=250μA, VDS= VGS VDS=600V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=2.0A VDS=10V, ID=2.0A VGS=0V, VDS=25V, f=1MHz Min. 600 2.0 - Typ. 2.1 4.0 670 57 9.8 10 42 38 46 12 4 3 Max. 4.0 1 ±100 2.5 848 71 12.2 15 - Unit V V μA nA Ω S pF VDD=300V, ID=4A RG=25Ω - ③④ - ns VDS=480V, VGS=10V ID=4A - ③④ - nC Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted) Characteristic Continuous source current Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④ Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=4A Is=4A dis/dt=100A/us Min - Typ 300 2.2 Max 4 16 1.4 - Unit A V ns uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=25.9mH, IAS=4A, VDD=50V, RG=27Ω , Starting TJ = 25℃ ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T6Q006-001 2 SMK0460I Electrical Characteristic Curves Fig. 1 ID - VDS 7 .5 7.0 6.5 6.0 5.5 .0 : .5 Fig. 2 ID - VGS ℃ - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ KSD-T6Q006-001 3 SMK0460I Electrical Characteristic Curves Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ ㅋ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area ` * KSD-T6Q006-001 4 SMK0460I Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T6Q006-001 5 SMK0460I Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T6Q006-001 6 SMK0460I Outline Dimension KSD-T6Q006-001 7 SMK0460I The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T6Q006-001 8