SMK0780FD
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
High voltage: BVDDS=800V Low gate charge: Qg=40nC (Typ.) Low drain-source On resistance: RDS(on)=1.6Ω (Max.) 100% avalanche tested RoHS compliant device and available in halogen free device
Ordering Information
Part Number SMK0780FD Marking SMN0780 Package TO-220F-3L GDS
TO-220F-3L
Marking Information
Column 1 : Manufacturer Column 2 : Production Information e.g.) GFYMDD -. G : Option Code (H : Halogen Free) -. F : Factory Management Code -. YMDD : Date Code (Year, Month, Date) Column 3 : Device Code
AUK AUK AUK GFYMDD ΔYMDD SMK0780 SDB20D45
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Avalanche current (Note 2) Single pulsed avalanche energy Repetitive avalanche current Repetitive avalanche energy Power dissipation Junction temperature Storage temperature range
* Limited only maximum junction temperature
(Note 2)
Symbol VDSS VGSS ID Tc=25C Tc=100C IDM IAS EAS IAR EAR PD TJ Tstg
Rating 800 30 7 4.4 28 7 522 7 4.5 45 150 -55~150
Unit V V A A A A mJ A mJ W C C
(Note 1) (Note 1)
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
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SMK0780FD
Thermal Characteristics
Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth(j-c) Rth(j-a) Rating Max. 2.77 Max. 62.5 Unit C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance (Note 3) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time (Note 3,4) Rise time (Note 3,4) Turn-off delay time Fall time (Note 3,4) Total gate charge (Note 3,4) Gate-source charge (Note 3,4) Gate-drain charge (Note 3,4)
(Note 3,4)
Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition ID=250uA, VGS=0 ID=250uA, VDS=VGS VDS=800V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=3.5A VDS=10V, ID=3.5A VDS=25V, VGS=0V, f=1.0MHz
Min. 800 3 -
Typ. 1.28 5.6 1650 135 15 40 110 65 70 40 12 15
Max. 5 1 100 1.6 -
Unit V V uA nA S
pF
VDD=400V, ID=7A, RG=25Ω
-
ns
VDS=640V, VGS=10V, ID=7A
-
nC
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time (Note 3,4) Reverse recovery charge
(Note 3,4)
Symbol IS ISM VSD trr Qrr
Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=7A IS=7A, VGS=0V dIF/dt=100A/us
Min. -
Typ. 560 4
Max. 7 28 1.4 -
Unit A A V ns uC
Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=20mH, IAS=7A, VDD=50V, RG=25, Starting TJ=25C 3. Pulse test: Pulse width≤300us, Duty cycle≤2% 4. Essentially independent of operating temperature typical characteristics
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
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SMK0780FD
Electrical Characteristics Curves
Fig. 1 ID - VDS
50 45 40
9.5 V 9.0 V 8.5 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom 5.0 V Top
Fig. 2 ID – VGS
10
Drain Current, ID[A]
Drain Current, ID[A]
35 30 25 20 15 10 5 0 0
※Note: 1.250㎲ Pulse Test 2.TC =25°C
1
150℃ -25℃
0.1 25℃
0.01
※Note:
1.VDS =10V 2.250㎲ Pulse Test
10
20
30
40
50
0.001 0
2
4
6
8
10
Drain-Source Voltage, VDS[V]
Gate-Source Voltage, VGS[V]
Fig. 3 RDS(ON) - ID
3
※Note: TJ =25
`
Source Current, IS [A]
Fig. 4 IS - VSD
10
Drain-Source On-Resistance RDS(ON)[ ]
2.5
150℃ 1
2
VGS=20V
1.5
VGS=10V
25℃ 0.1
1
0.5
※Note:
0
0
2
4
6
8
10
12
14
16
0.01
1.VGS =0V 2.250㎲ Pulse Test
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Drain-Current, ID[A]
Source - Drain Forward Voltage, VSD[V]
Fig. 5 Capacitance - VDS
3000
※Note:
1.VGS =0V 2.f=1MHz
Fig. 6 VGS - QG
14
※Note: 1.ID =7A
Gate-Source Voltage, VGS [V]
2500 Ciss
12 10 8 6 4 2 0
2.vDS =640V
Capacitance [pF]
2000
1500
1000 Crss 500
Coss
0 0.1
1
10
0
5
10
15
20
25
30
35
40
Drain-Source Voltage, VDS[V]
Total Gate Charge, Qg [nC]
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
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SMK0780FD
Electrical Characteristics Curves (Continue)
Fig. 7 BVDSS - TJ
1.15
Fig. 8 RDS(ON) - TJ
3
Drain-Source Breakdown Voltage BVDSS' (Normalized)
Drain-Source On-Resistance RDS(ON)' (Normalized)
1.10
2.5
2
1.05
1.5
1.00
1
0.95
※Note:
0.5
※Note:
1.vGS =0V 2.ID =3.5A
1.vGS =0V 2.ID =250μs
0.90 -50
-25
0
25
50
75
100
125
150
175
0 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ[℃]
Junction Temperature, TJ[℃]
Fig. 9 Safe Operating Area
102
Fig. 10 ID - TC
8
Operation in This Area is Limited by RDS(on)
10μs
ID , Drain Current [A]
Drain Current, ID [ ]
10
1
100μs 1ms 10ms
A
10
2
6
10
0
DC
4
10
-1
※Note:
2
1.TC =25 2.TJ =150 3.Single Pulse
10
-2
0
10
0
10
1
0
25
50
75
100
VDS , Drain-Source Voltage [V]
Case Temperature, TC [
°C
125
150
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
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SMK0780FD
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
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SMK0780FD
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
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SMK0780FD
Package Outline Dimensions
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
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SMK0780FD
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.
Rev. date: 01-JUN-11
KSD-T0O073-000
www.auk.co.kr
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