SMK1350F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
• • • • High Voltage : BVDSS=500V(Min.) Low Crss : Crss=23pF(Typ.) Low gate charge : Qg=36nC(Typ.) Low RDS(on) : RDS(on)=0.48Ω(Max.)
G Package Code TO-220F-3L GD S TO-220F-3L
PIN Connection
D
Ordering Information
Type No. SMK1350F Marking SMK1350
S
Marking Diagram
Column 1 : Manufacturer
AUK AUK AUK GYMDD ΔYMDD SMK1350 SDB20D45
Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ①
*
Symbol
VDSS VGSS ID TC=25℃ TC=100℃ IDM PD IAS EAS IAR EAR TJ Tstg
Rating
500 ±30 13 8.2 52 40 13 751 13 19.5 150 -55~150
Unit
V V A A A W A mJ A mJ °C
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
-
Max.
3.12 62.5
Unit
℃/W
KSD-T0O048-001
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SMK1350F
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④
Symbol
BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition
ID=250uA, VGS=0V ID=250uA, VDS=VGS VDS=500V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=6.5A VDS=10V, ID=6.5A VGS=0V, VDS=25V f=1 MHz
Min. Typ. Max.
500 2.0 0.4 15 1960 190 23 25 100 130 100 36 8.3 9.8 4.0 1 ±100 0.48 2450 237 29 45 -
Unit
V V uA nA Ω S pF
VDD=250V, ID=13A RG=25Ω
-
③④
VDS=400V, VGS=10V ID=13A
-
ns
nC
③④
-
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④
Symbol
IS ISM VSD trr Qrr
Test Condition
Integral reverse diode in the MOSFET VGS=0V, IS=13A IS=13A, VGS=0V dIF/dt=100A/us
Min.
-
Typ. Max. Unit
410 4.5 13 52 1.4 A V ns uC
Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=8.0mH, IAS=13A, VDD=50V, RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature
KSD-T0O048-001
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SMK1350F
Electrical Characteristic Curves
Fig. 1 ID - VDS
℃
Fig. 2 ID - VGS
-
Fig. 3 RDS(on) - ID
℃
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fig.6 VGS - QG
℃
KSD-T0O048-001
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SMK1350F
Electrical Characteristic Curves
Fig. 7 VDSS - TJ Fig.8 RDS(on) - TJ
C
C
Fig. 9 ID - TC
Fig. 10 Safe Operating Area
*
KSD-T0O048-001
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Fig. 11 Gate Charge Test Circuit & Waveform
SMK1350F
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0O048-001
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SMK1350F
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
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SMK1350F
Outline Dimension
unit: mm
KSD-T0O048-001
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SMK1350F
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.
KSD-T0O048-001
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