SMK1820D

SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features     High Voltage: BVDSS=200V(Min.) Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=0.17Ω(Max.) Type No. SMK1820D Marking SMK1820 Package Code TO-252 PIN Connection D D Ordering Information G S G TO-252 S Marking Diagram Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Symbol VDSS VGSS ID (TC=25℃) (TC=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 200 30 18 11.3 72 70 18 453 18 13.9 150 -55~150 Unit V V A A A W A mJ A mJ C Drain current (Pulsed) * Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case ** Symbol Rth(J-C) Rth(J-A) Typ. - Max 1.79 50 Unit ℃/W Junction-ambient ** When mounted on the minimum pad size recommended (PCB Mount) KSD-T6O013-001 1 SMK1820D Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=200V, VGS=0V VDS=160V, VGS=0V, TC=125℃ VDS=0V, VGS=30V VGS=10V, ID=9.0A VDS=10V, ID=9.0A VGS=0V, VDS=25V, f=1MHz Min. 200 2.0 - Typ. 0.14 10.5 942 227 55 15 130 135 105 22 6.6 7.2 Max. 4.0 1 100 100 0.17 1240 310 71 28 - Unit V V A A nA  S pF VDD=125V, ID=18A RG=25Ω - ③④ VDS=160V, VGS=10V ID=18A - ns nC ③④ - Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Source current Source current(Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④ Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=18A Is=18A, VGS=0, diS/dt=100A/us Min - Typ 208 1.63 Max 18 72 1.4 - Unit A V ns uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=2.1mH, IAS=18A, VDD=50V, RG=27Ω ③ Pulse Test : Pulse Width 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T6O013-001 2 SMK1820D Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG ℃ KSD-T6O013-001 3 SMK1820D Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ ㅋ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T6O013-001 4 Fig. 11 Gate Charge Test Circuit & Waveform SMK1820D Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T6O013-001 5 SMK1820D Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T6O013-001 6 SMK1820D Outline Dimension ※ Recommended Land Pattern [unit: mm] 7.00 1.50 4.60 2.50 7.00 KSD-T6O013-001 7 SMK1820D The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T6O013-001 8