SMK2050CI
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
High Voltage : BVDSS=500V(Min.) Low Crss : Crss=27pF(Typ.) Low gate charge : Qg=65nC(Typ.) Low RDS(on) : RDS(on)=0.26Ω(Max.)
G Package Code TO-3P GDS TO-3P
PIN Connection
D
Ordering Information
Type No. SMK2050CI Marking SMK2050
S
Marking Diagram
Column 1 : Manufacturer
AUK GYMDD SMK2050
Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed)
*
Symbol
VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
500 30 20 12.6 80 150 20 1000 20 28 150 -55~150
Unit
V V A A A W A mJ A mJ C
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
-
Max.
0.83 40
Unit
C/W
KSD-T0V002-001
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SMK2050CI
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition
ID=250A, VGS=0 ID=250A, VDS=VGS VDS=500V, VGS=0V VDS=400V, VGS=0V TC=125℃ VDS=0V, VGS=30V VGS=10V, ID=10A VDS=10V, ID=10A VGS=0V, VDS=25V, f=1MHz
Min. Typ. Max.
500 2 0.21 24.6 3120 355 27 95 375 100 105 65 17.6 18.4 4 1 100 100 0.26 85 -
Unit
V V uA nA S pF
VDD=250V, ID=20A RG=25Ω
-
③④
-
ns
VDS=400V, VGS=10V ID=20A
nC
③④
-
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic
Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④
Symbol
IS ISP VSD trr Qrr
Test Condition
Integral reverse diode in the MOSFET VGS=0V, IS=20A IS=20A, VGS=0V dIS/dt=100A/us
Min.
-
Typ. Max. Unit
507 7.2 20 80 1.4 A V ns uC
Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=4.5mH, IAS=20A, VDD=50V, RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature
KSD-T0V002-001
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SMK2050CI
Electrical Characteristic Curves
Fig. 1 ID - VDS
℃
Fig. 2 ID - VGS
-
Fig. 3 RDS(on) - ID
℃
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fig.6 VGS - QG
℃
KSD-T0V002-001
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SMK2050CI
Electrical Characteristic Curves
Fig. 7 VDSS - TJ Fig.8 RDS(on) - TJ
C
C
Fig. 9 ID - TC
Fig. 10 Safe Operating Area
*
KSD-T0V002-001
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Fig. 11 Gate Charge Test Circuit & Waveform
SMK2050CI
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
KSD-T0V002-001
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SMK2050CI
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
KSD-T0V002-001
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SMK2050CI
Outline Dimension
unit: mm
KSD-T0V002-001
7
SMK2050CI
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.
KSD-T0V002-001
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