SMK630D
Advanced N-Ch Power MOSFET
DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features
• • • • High Voltage : BVDSS=200V(Min.) Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)
PIN Connection
D D G Package Code TO-252 G S S TO-252
Ordering Information
Type No. SMK630D Marking SMK630
Marking Diagram
SMK 630 YWW
Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ①
*
Symbol
VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg
Rating
200 ±30 9 5.7 36 45 9 232 9 9.5 150 -55~150
Unit
V V A A A W A mJ A mJ °C
Characteristic
Thermal resistance Junction-case Junction-ambient
**
Symbol
Rth(J-C) Rth(J-A)
Typ.
-
Max.
2.77 50
Unit
°C/W
** When mounted on the minimum pad size recommended (PCB Mount)
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SMK630D
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition
ID=250uA, VGS=0 ID=250uA, VDS=VGS VDS=200V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=4.5A VDS=10V, ID=4.5A VGS=0V, VDS=25V, f=1MHz
Min. Typ. Max.
200 2.0 0.34 5.5 420 99 24 11 92 70 72 12 2.4 3.5 4.0 1 ±100 0.40 525 128 28 17 -
Unit
V V uA nA Ω S pF
VDD=100V, ID=9A RG=25Ω
-
③④
-
ns
VDS=160V, VGS=10V ID=9A
nC
③④
-
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=4.3mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature ① ④
Symbol
IS ISM VSD trr Qrr
Test Condition
Integral reverse diode in the MOSFET VGS=0V, IS=9A IS=9A, VGS=0V dIF/dt=100A/us
Min.
-
Typ. Max. Unit
158 0.97 9 36 1.4 A V ns uC
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SMK630D
Electrical Characteristic Curves
Fig. 1 ID - VDS Fig. 2 ID - VGS
Fig. 3 RDS(on) - ID
Fig. 4 IS - VSD
Fig. 5 Capacitance - VDS
Fig. 6 VGS - QG
℃
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SMK630D
Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ
ㅋ
C
C
Fig. 9
ID - TC
Fig. 10 Safe Operating Area
*
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Fig. 11 Gate Charge Test Circuit & Waveform
SMK630D
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
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SMK630D
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
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SMK630D
Outline Dimension
unit: mm
Recommended Land Pattern [unit: mm]
7.00
1.50 4.60
2.50
7.00
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SMK630D
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.
KSD-T6O014-001
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