SMK830P

SMK830P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage : BVDSS=500V(Min.) Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) G Package Code TO-220AB G DS TO-220AB PIN Connection D Ordering Information Type No. SMK830P Marking SMK830 S Marking Diagram Column 1 : Manufacturer AUK GYMDD SMK830 Column 2 : Production Information e.g.) GYMDD -. G : Factory Management Code -. YMDD : Date Code (Year, Month, Date) Column 3 : Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Symbol VDSS VGSS ID TC=25C TC=100C IDM PD ② ② ① ① Rating 500 30 4.5 2.9 18 70 4.5 250 4.5 5.0 150 -55~150 Unit V V A A A W A mJ A mJ C Drain current (Pulsed) Power dissipation * Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range IAS EAS IAR EAR TJ Tstg * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 1.78 62.5 Unit C/W KSD-T0P025-002 1 SMK830P Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250uA, VGS=0V ID=250uA, VDS=VGS VDS=500V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=2.25A VDS=10V, ID=2.25A VGS=0V, VDS=25V f=1 MHz Min. Typ. Max. 500 2.0 1.2 5.2 745 82 33 12 46 50 48 16 5.5 4.0 4.0 1 100 1.5 930 102 42 20 - Unit V V uA nA  S pF VDD=250V, ID=4.5A RG=25Ω ③④ ③④ - ns VDS=400V, VGS=10V ID=4.5A nC Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge ① ④ Symbol IS ISM VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=4.5A IS=4.5A, VGS=0V dIF/dt=100A/us Min. - Typ. Max. Unit 263 1.9 4.5 18 1.4 A V ns uC Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=22.2mH, IAS=4.5A, VDD=50V, RG=25Ω, Starting TJ=25C ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature KSD-T0P025-002 2 SMK830P Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS 1 Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS ` Fig. 6 VGS - QG ℃ KSD-T0P025-002 3 SMK830P Fig. 7 V(BR)DSS - TJ Fig. 8 RDS(on) - TJ ㎂ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T0P025-002 4 Fig. 11 Gate Charge Test Circuit & Waveform SMK830P Fig. 12 Switching Time Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T0P025-002 5 SMK830P Fig. 14 Peak Diode Recovery dv/dt Test Circuit & Waveform rr KSD-T0P025-002 6 SMK830P Outline Dimension unit : mm KSD-T0P025-002 7 SMK830P The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0P025-002 8