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HAH1DR500-S

HAH1DR500-S

  • 厂商:

    LEM(莱姆)

  • 封装:

  • 描述:

  • 数据手册
  • 价格&库存
HAH1DR500-S 数据手册
AUTOMOTIVE CURRENT TRANSDUCER OPEN LOOP TECHNOLOGY HAH1DR 500-S Introduction Principle of HAH1DR Family he HAH1DR family is for the electronic measurement of DC, AC or pulsed currents in high power automotive applications with galvanic separation between the primary circuit (high power) and the secondary circuit (electronic circuit). The HAH1DR family gives you the choice of having different current measuring ranges in the same housing (from ± 200 A up to ± 900 A). Features The open loop transducers uses a Hall effect integrated circuit. The magnetic flux density B, contributing to the rise of the Hall voltage, is generated by the primary current IP to be measured. The current to be measured IP is supplied by a current source i.e. battery or generator (Figure 1). Within the linear region of the hysteresis cycle, B is proportional to: B (IP) = constant (a) x IP The Hall voltage is thus expressed by: ●● Open Loop transducer using the Hall effect ●● Unipolar + 5 V DC power supply ●● Primary current measuring range ± 500 A ●● Maximum RMS primary admissible current: defined by busbar to have T° < + 150 °C VH= (RH/d) x I x constant (a) x IP Except for IP, all terms of this equation are constant. Therefore: VH = constant (b) x IP The measurement signal VH amplified to supply the user output voltage or current. ●● Operating temperature range: - 40 °C < T° < + 125 °C ●● Output voltage: full ratio-metric (in sensitivity and offset) ●● Compact design. Advantages ●● Excellent accuracy ●● Very good linearity ●● Very low thermal offset drift ●● Very low thermal sensitivity drift ●● Wide frequency bandwith ●● No insertion losses. Fig. 1: Principle of the open loop transducer Automotive applications ●● ●● ●● ●● ●● Battery monitoring Starter Generators Inverters HEV application EV application. N° 97.D4.50.000.0 28August2014/Version 4 Page 1/4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice www.lem.com Dimensions HAH1DR 500-S (in mm) Drawing for information only Remarks Mechanical characteristics ●● Plastic case PBT GF 30 ●● Magnetic core Iron silicon alloy ●● Mass 38 g ●● Electrical terminal coating Brass tin plated ●● Vout > 2.5 when IP flows in the direction of the arrow. System architecture (example) CL ≤ 100 nF EMC protection RC Low pass filter EMC protection (optional) Mounting recommendation ●● Connector type UC Ip AMP 1473672-1 Ip Electronic schematic Components list DR version 4.7 nF 47 nF Vout UC Diagnostic Mode RL > 10 kΩ optional resistor for signal line diagnostic Vout Diagnostic Open circuit Vin = < 0.15V Short GND Vin = < 0.15V Page 2/4 28August2014/Version 4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice www.lem.com HAH1DR 500-S Absolute Maximum ratings (not operating) Parameter Symbol Specification Min Typical ÎPmax Primary current peak Supply continuous over voltage Reverse voltage Unit 1) V UC 2) 7 - 0.5 TS °C UESD kV Continuous output current Iout mA RMS voltage for AC insulation test, 50 Hz, 1 min Ud kV Continuous output over voltage (Analog) Vout V - 0.5 Insulation resistance RIS MΩ 500 tc minutes Ambient storage temperature Electrostatic discharge voltage Output Short circuit duration Conditions Max Not operating 1 min @ TA = 25 °C - 55 125 2 - 10 JESD 22-A114-B (HBM) 10 2 50 Hz, 1 min UC + 0.5 500 V - ISO 16750-2 2 Operating characteristics in nominal range (IPN) Parameter Symbol Unit Min Electrical Data Specification Typical Max 5 5.25 Primary current IPN A - 500 Supply voltage UC V 4.75 Ambient operating temperature TA °C - 40 Output voltage (Analog) 3) Vout V Vout = (UC/5) · (Vo + G · IP ) G mV/A 4 Current consumption IC mA Load resistance RL ΚΩ 10 Capacitive loading CL nF 1 Output internal resistance Rout Ω εr % Sensitivity 3) Ratiometricity error Conditions 500 125 15 Connector limited 105 °C @ UC @ UC = 5 V 20 @ UC = 5 V, - 40 °C < TA< 125 °C 100 10 DC to 1 kHz 1 @ TA = 25 °C, @ I = IP 0.5 Performance data Sensitivity error εG Electrical offset current IOE Magnetic offset current IOM % ± 0.5 @ TA = 25 °C, @ UC = 5 V ± 1.5 A IO Global offset current -1 @ TA = 25 °C, @ UC = 5 V, after ± IP ±1 - 2.7 2.7 @ TA = 25 °C Average temperature coefficient of VOE TCIOEAV mV/°C - 0.08 ± 0.03 0.08 @ - 40 °C < TA< 125 °C Average temperature coefficient of G TCGAV %/°C - 0.035 ± 0.02 0.035 @ - 40 °C < TA< 125 °C -1 10 Linearity error εL % Step response time to 90 % IPN tr µs 6 BW kHz 30 VSZ V Vno p-p mV Frequency bandwidth 4) Output clamping voltage minimum Output clamping voltage maximum Output voltage noise peak-peak Notes: 3) 1) 2) 1 @ UC = 5 V, @ TA = 25 °C, @ I = IP @ di/dt = 100 A/µs @ - 3 dB 0.1 4.9 @ UC = 5 V, @ TA = 25 °C @ UC = 5 V, @ TA = 25 °C 14 DC to 1 kHz Busbar temperature must be below 150 °C Transducer not protected against reverse polarity The output voltage Vout is fully ratiometric: The offset and sensitivity are dependent on the supply voltage UC relative to the following formula: IP =  5 · Vout − VO  · 1 with G in (V/A)  UC  G 4) Tested only with small signal only to avoid excessive heating of the magnetic core. Page 3/4 28August2014/Version 4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice www.lem.com HAH1DR 500-S Output noise voltage: Sensitivity with temperature: The output voltage noise is the result of the noise floor of the Hall elements and the linear amplifier. Magnetic offset: The magnetic offset is the consequence of an over-current on the primary side. It’s defined after an excursion of IPN. Linearity: The maximum positive or negative discrepancy with a reference straight line Vout = f (IP). Unit: linearity (%) expressed with full scale of IPN. Response time (delay time) tr: The time between the primary current signal (IPN) and the output signal reach at 90 % of its final value. Sensitivity: The Transducer’s sensitivity G is the slope of the straight line Vout Non linearity example The error of the sensitivity in the operating temperature is the relative variation of sensitivity with the temperature considered with the initial offset at 25 °C. The sensitivity variation GT is the maximum variation (in ppm or %) of the sensitivity in the temperature range: GT = (Sensitivity max - Sensitivity min) / Sensitivity at 25 °C. The sensitivity drift TCGAV is the GT value divided by the temperature range. Deeper and detailed info available is our LEM technical sales offices (www.lem.com). Offset voltage @ IP = 0 A: The offset voltage is the output voltage when the primary current is null. The ideal value of VO is UC/2 at UC = 5 V. So, the difference of VO -UC/2 is called the total offset voltage error. This offset error can be attributed to the electrical offset (due to the resolution of the ASIC quiescent voltage trimming), the magnetic offset, the thermal drift and the thermal hysteresis. Deeper and detailed info available is our LEM technical sales offices (www.lem.com). Environmental test specifications: Reference straight line Max linearity error IP Name Standard Damp heat, steady state JESD22-A101 Isolation resistance Linearity variation in IPN Vout = f (IP), it must establish the relation: Vout (IP) = UC/5 (G ٠ IP + Vo) Offset with temperature: I [A] 500 V/1min Temperature humidity cycle test ISO 16750-4 - 10 + 85 °C 10 days Isolation test IEC 60664-1 2 kV / 50 Hz / 1min Mechanical tests Vibration test (random) IEC 60068-2-64 ISO 16750-3 & 4.1.2.5 (2007) 20 … 2000 Hz Random rms (11g rms) 8 h / axis Terminal strength test According to LEM Thermal shocks IEC 60068-214 Na - 40 + 125 °C 300 cycles Free fall ISO 16750-3 § 4.3 1 m concrete ground IT EMC Test 90 % Vout IP ISO 16750-2 § 4.10 Conditions 85 °C - 85 °C / 1000 h tr Radiated electromagnetic immunity Directive 2004/104/CE ISO 11452-2 30 V/m 20-2000 MHz Bulk current injection immunity Directive 2004/104/CE ISO 11452-4 1 - 400 MHz - 60 mA Radiated radio frequency electromagnetic field immunity IEC 61000-4-3 80 MHz to 1,000 MHz - 10 V/m Electrostatic discharge immunity test IEC 61000-4-2 Air discharge=2 kV t [µs] The error of the offset in the operating temperature is the variation of the offset in the temperature considered with the initial offset at 25 °C. The offset variation IOT is a maximum variation the offset in the temperature range: IOT = IOE max - IOE min The Offset drift TCIOEAV is the IOT value divided by the temperature range. Page 4/4 28August2014/Version 4 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice www.lem.com
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