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LA158B-VG.VY.SBKS-R1-PF

LA158B-VG.VY.SBKS-R1-PF

  • 厂商:

    LIGITEK

  • 封装:

  • 描述:

    LA158B-VG.VY.SBKS-R1-PF - LED ARRAY - LIGITEK electronics co., ltd.

  • 数据手册
  • 价格&库存
LA158B-VG.VY.SBKS-R1-PF 数据手册
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA158B/VG.VY.SBKS-R1-PF DATA SHEET DOC. NO : QW0905-LA158B/VG.VY.SBKS-R1-PF REV. DATE : : A 24 - Nov. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA158B/VG.VY.SBKS-R1-PF Page 1/7 Package Dimensions LA158B/VG.VY.SBKS-R1-PF 1st 2nd 3rd 5.08 1.5±0.3 12.85 1st 3.3 10.16 3.3 1.78 □0.5TYP 2nd 3rd 3.2±0.5 6.89±0.5 9.43±0.5 11.97±0.5 2.54TYP - + LVY11241-PF LVG21541-PF LSBK21541S 3.5 2.4 3.5 2.4 ψ1.8 3.0 ψ1.8 2.6 4.0 1.5MAX 1.6 1.5MAX 25.0MIN □0.5TYP □0.5TYP 25.0MIN 2.54TYP 1.0MIN 2.54TYP 1.0MIN +- +- Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA158B/VG.VY.SBKS-R1-PF Absolute Maximum Ratings at Ta=25 ℃ Absolute Maximum Ratings Parameter Symbol VG Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF IFP PD Ir ESD Topr Tstg 30 120 100 10 ---VY 30 60 75 10 2000 -20 ~ +80 -30 ~ +100 SBKS 30 100 120 50 500 mA mA mW UNIT Page 2/7 μA V ℃ ℃ Static Electricity or power surge will the Use of anti-electrosatic * glove is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly these All equipment and machinery grounded. Typical Electrical & Optical Characteristics (Ta=25 ℃) Peak Dominant Spectral wave wave halfwidth length length △λnm λPnm λDnm PART NO COLOR MATERIAL Emitted Gap Lens Green Transparent Luminous Viewing intensity angle @20mA(mcd) 2θ 1/2 (deg) Min. Typ. Max. Min. Typ. 1.7 1.7 ------2.6 3.5 2.6 ---4.2 90 160 20 20 20 Forward voltage @20mA(V) Green Yellow Blue 565 ------- ---590 475 30 20 26 LA158B/VG.VY.SBKS-R1-PF AlGaInP Yellow Transparent 900 2008 120 280 InGaN/SiC Blue Transparent Note : 1.The forward voltage data did not including ± 0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA158B/VG.VY.SBKS-R1-PF Page 3/7 Typical Electro-Optical Characteristics Curve VG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.5 Forward Current(mA) 100 Relative Intensity Normalize @20mA 1.0 3.0 4.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 1.0 0.1 2.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ -40 -20 0 20 40 60 80 100 1.2 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA158B /VG.VY.SBKS-R1-PF Page 4/7 Typical Electro-Optical Characteristics Curve VY CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 10 Relative Intensity Normalize @20mA 1.5 2.0 2.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 0.1 1.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ -40 -20 0 20 40 60 80 100 1.1 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.0 0.9 0.8 Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength 1.0 Ambient Temperature( ℃) Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA158B/VG.VY.SBKS-R1-PF Page 5/7 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.1 Forward current vs. Forward Voltage 30 25 20 15 10 5 0 1 2 3 4 5 Fig.2 Relative Intensity vs. Forward Current Forward Current(mA) 1.5 Relative Intensity Normalize @20mA 1.25 1.0 0.75 0.5 0.25 0 0 5 10 15 20 25 30 Forward Voltage(V) Forward Current(mA) Fig.3 Forward Current vs. Temperature Fig.4 Relative Intensity vs. Wavelength Forward Current@20mA 30 20 10 0 0 25 50 75 100 Relative Intensity@20mA 40 1.0 0.5 0 380 430 480 530 580 630 680 Ambient Temperature( ℃) Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA158B /VG.VY.SBKS-R1-PF Page 6/7 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to case) 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to case) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 2° /sec max Preheat 60 Seconds Max 25° 0° 0 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA158B/VG.VY.SBKS-R1-PF Page 7/7 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. J IS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95 % 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2
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