LA193B-HY-PF

LA193B-HY-PF

  • 厂商:

    LIGITEK

  • 封装:

  • 描述:

    LA193B-HY-PF - LED ARRAY - LIGITEK electronics co., ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
LA193B-HY-PF 数据手册
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA193B/HY-PF DATA SHEET DOC. NO : REV. DATE : QW0905-LA193B/HY-PFA A : 07 - Oct. - 2009 發行 立碁電子 DCC LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA193B/HY-PF Page 1/5 Package Dimensions 4.5 2.5±0.3 6.0 Ø3.25 Ø4.0 3.0 8.84 6.3 3.2±0.3 □0.5 TYP 2.54TYP 4.0±0.3 + - LHY2340-1-PF 3.0 5.0 1.5MAX □0.5 TYP 25.0MIN 1.0MIN 2.54TYP + - Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA193B/HY-PF Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol HY Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Electrostatic Discharge( * ) Operating Temperature Storage Temperature IF IFP PD Ir ESD Topr Tstg 30 60 75 10 2000 -40 ~ +85 -40 ~ +100 mA mA mW UNIT μA V ℃ ℃ Static Electricity or power surge will the Use of anti-electrosatic * glove is recommended when handingdamageLED.LED.devices, a conductive wrist band or must be properly these All equipment and machinery grounded. Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO MATERIAL Emitted COLOR Forward Dominant Spectral voltage wave halfwidth length △λ nm @ 20mA(V) λDnm Luminous intensity @20mA(mcd) Viewing angle 2θ 1/2 (deg) Lens 595 15 Min. Max. Min. Typ. 1.7 2.6 550 1100 80 LA193B/HY-PF AlGaInP Yellow Yellow Diffused Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA193B/HY-PF Page 3/5 Typical Electro-Optical Characteristics Curve HY CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1000 3.0 Forward Current(mA) 100 Relative Intensity Normalize @20mA 2.5 2.0 1.5 1.0 0.5 0.0 10 1.0 0.1 1.0 1.5 2.0 2.5 3.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 Forward Voltage@20mA Normalize @25℃ Relative Intensity@20mA Normalize @25℃ -40 -20 0 20 40 60 80 100 1.1 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength 1.0 Relative Intensity@20mA 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA193B/HY-PF Page 4/5 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:30W Max Temperature 350° C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to case) 2.Wave Soldering Profile Dip Soldering Preheat: 120° C Max Preheat time: 60seconds Max Ramp-up 2° C/sec(max) Ramp-Down:-5° C/sec(max) Solder Bath:260° C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to case) Temp(° C) 260° C3sec Max 260° 5° /sec max 120° 2° /sec max Preheat 60 Seconds Max 25° 0° 0 50 100 150 Time(sec) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA193B/HY-PF Page 5/5 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5 ℃&-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2
LA193B-HY-PF
物料型号:STMicroelectronics的STM32F103C8T6 器件简介:一款基于ARM Cortex-M3内核的32位微控制器,主频72MHz,内置64KB的Flash存储器和20KB的SRAM。

引脚分配:共85个引脚,包括电源引脚、地引脚、I/O引脚、复位引脚等。

参数特性:工作电压2.0-3.6V,工作温度范围-40°C至+85°C。

功能详解:具有丰富的外设接口,如USB、CAN、ADC、DAC、RTC、LCD控制器等。

应用信息:适用于工业控制、消费电子、医疗设备等多种应用场景。

封装信息:LQFP48封装,尺寸7x7mm。
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