LA29B-HY4GXG

LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA29B/HY4GXG DATA SHEET DOC. NO : REV. DATE : : QW0905-L A29B/HY4GXG C 17 - Jan - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA29B/HY4GXG Page 1/6 Package Dimensions H 5.0 5.0 6.0X7=42 2.7 Y G G G G X G 49.6±0.5 10.0 □0.5 TYP 13.5MIN 1.0MIN 2.3TYP -+ LG25820 LY25820 LH25820 5.0 2.8 8.0 1.5MAX 12.5MIN □0.5 TYP 2.3TYP 1.0MIN + - Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA29B/HY4GXG Page 2/6 Absolute Maximum Ratings at Ta=25 ℃ Ratings Parameter Symbol G Forward Current Peak Forward Current Duty 1/10@10KHz Power Dissipation Reverse Current @5V Operating Temperature Storage Temperature Soldering Temperature IF IFP PD Ir Topr Tstg Tsol 30 120 100 Y 20 80 60 10 -40 ~ +85 -40 ~ +100 Max 260 ℃ for 5 sec Max (2mm from body) H 15 60 40 mA mA mW UNIT μA ℃ ℃ Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO MATERIAL Emitted GaP Red COLOR Forward Peak Spectral voltage wave halfwidth length △λ nm @ 20mA(V) λPnm Luminous intensity @10mA(mcd) Viewing angle 2θ 1/2 (deg) Lens Red Diffused 697 585 565 90 35 30 Min. Max. Min. 1.7 1.7 1.7 2.6 2.6 2.6 0.25 1.8 1.2 Typ. 0.6 4.5 3.0 160 160 160 LA29B/HY4GXG GaAsP/GaP Yellow Yellow Diffused GaP Green Green Diffused Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA29B/HY4GXG Page3/6 Typical Electro-Optical Characteristics Curve H CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 1000 Forward Current(mA) 100 Relative Intensity Normalize @20mA 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 10 1.0 0.1 1.0 2.0 3.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Forward Voltage@20mA Normalize @25 ℃ Relative Intensity@20mA Normalize @25 ℃ -40 -20 0 20 40 60 80 100 1.2 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature(℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 600 700 800 900 1000 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA29B/HY4GXG Page 4/6 Typical Electro-Optical Characteristics Curve Y CHIP Fig.1 Forward current vs. Forward Voltage 1000 Fig.2 Relative Intensity vs. Forward Current 3.0 Forward Current(mA) 100 10 1.0 Relative Intensity Normalize @20mA 1.0 2.0 3.0 4.0 5.0 2.5 2.0 1.5 1.0 0.5 0.0 1.0 10 100 1000 0.1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature 1.2 Forward Current(mA) Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ -40 -20 0 20 40 60 80 100 Forward Voltage@20mA Normalize @25 ℃ 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 Ambient Temperature( ℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 700 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA29B/HY4GXG Page 5/6 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 1000 Forward Current(mA) 100 Relative Intensity Normalize @20mA 2.0 3.0 4.0 5.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 1.0 0.1 1.0 1.0 10 100 1000 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Forward Current(mA) Fig.4 Relative Intensity vs. Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 1.1 1.0 0.9 0.8 -40 -20 0 20 40 60 80 100 Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ 1.2 Ambient Temperature(℃) Ambient Temperature( ℃) Fig.5 Relative Intensity vs. Wavelength Relative Intensity@20mA 1.0 0.5 0.0 500 550 600 650 Wavelength (nm) LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA29B/HY4GXG Page 6/6 Reliability Test: Test Item Test Condition 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) Description This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. Reference Standard MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 Operating Life Test High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. J IS C 7021: B-12 High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-202:103B JIS C 7021: B-11 Thermal Shock Test 1.Ta=105 ℃±5℃ &-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2